BFG591,115 NXP Semiconductors, BFG591,115 Datasheet - Page 4

• Manufacturer Part Number: BFG591,115
• Description: TRANS NPN 15V 7GHZ SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BFG591,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 7GHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 70mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 70mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 7000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1985-2; 934023010115; BFG591 T/R

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. d
1995 Sep 04
V
V
V
I
h
C
f
G
V
SYMBOL
j
CBO
T
s
FE
= 25 C (unless otherwise specified).
(BR)CBO
(BR)CES
(BR)EBO
o
NPN 7 GHz wideband transistor
re
UM
21
V
f
p
im
2
p
UM
= 795.25 MHz; f
= V
= 60 dB (DIN45004B);
is the maximum unilateral power gain, assuming s
o;
V
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
insertion power gain
output voltage
q
= V
o
6 dB; V
q
= 803.25 MHz; f
PARAMETER
r
= V
o
6 dB;
r
= 803.25 MHz; measured at f
I
I
I
I
I
I
f = 1 MHz
I
f = 1 GHz
I
f = 900 MHz; T
I
f = 2 GHz; T
I
f = 1 GHz; T
note 2
C
C
E
E
C
B
C
C
C
C
= 0.1 mA; I
= 10 mA; I
= 0.1 mA; I
= 0; V
= 70 mA; V
= I
= 70 mA; V
= 70 mA; V
= 70 mA; V
= 70 mA; V
b
= 0; V
4
12
CONDITIONS
CB
is zero.
= 10 V
amb
amb
CE
B
E
C
CE
CE
CE
CE
CE
= 0
amb
= 0
= 0
= 12 V;
= 25 C
= 25 C
= 8 V
= 12 V;
= 12 V;
= 12 V;
= 12 V;
(p+q-r)
= 25 C
G
UM
= 793.25 MHz.
=
10
log
20
15
3

60






MIN.
-------------------------------------------------------- dB.

1
–
s
11




90
0.7
7
13
7.5
12
700
TYP.
s
2
21
 1

Product specification
2
–
s



100
250






MAX.
22
BFG591
2

V
V
V
nA
pF
GHz
dB
dB
dB
mV
UNIT