BFG591,115 NXP Semiconductors, BFG591,115 Datasheet - Page 8

• Manufacturer Part Number: BFG591,115
• Description: TRANS NPN 15V 7GHZ SOT-223
• Manufacturer: NXP Semiconductors

Specifications of BFG591,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 7GHz
• Power - Max: 2W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 70mA, 8V
• Current - Collector (ic) (max): 200mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 70mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 7000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1985-2; 934023010115; BFG591 T/R

NXP Semiconductors
1995 Sep 04
handbook, full pagewidth
handbook, full pagewidth
NPN 7 GHz wideband transistor
V
V
CE
CE
= 12 V; I
= 12 V; I
C
C
= 70 mA; Z
= 70 mA.
Fig.12 Common emitter forward transmission coefficient (s
o
= 50 
Fig.11 Common emitter input reflection coefficient (s
180
180
o
o
50
0
135
135
40 MHz
135
135
40
0.2
0.2
o
o
o
o
0.2
30
0.5
0.5
20
0.5
10
90
90
90
90
8
1
1
3 GHz
1
o
o
o
o
3 GHz
2
40 MHz
2
2
5
11
45
45
45
); typical values.
45
21
o
o
o
o
5
5
); typical values.
MGC800
MGC799
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BFG591