UPA861TD-T3-A CEL, UPA861TD-T3-A Datasheet

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UPA861TD-T3-A

Manufacturer Part Number
UPA861TD-T3-A
Description
TRANSISTOR NPN DUAL TD
Manufacturer
CEL
Datasheet

Specifications of UPA861TD-T3-A

Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
3V
Frequency - Transition
12GHz, 20GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2dB @ 2GHz
Power - Max
195mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 10mA, 1V / 50 @ 5mA, 1V
Current - Collector (ic) (max)
30mA, 35mA
Mounting Type
Surface Mount
Package / Case
6-MINIMOLD
Dc Collector/base Gain Hfe Min
140
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
DESCRIPTION
NEC's UPA861TD contains one NE894 and one NE687 NPN
high frequency silicon bipolar chip. The NE894 is an excellent
oscillator chip, featuring high fT and low current, low voltage
operation. The NE687 is an excellent buffer transistor, featur-
ing low noise and high gain. NEC's new ultra small TD package
is ideal for all portable wireless applications where reducing
board space is a prime consideration. Each transistor chip is
independently mounted and easily configured for oscillator/
buffer amplifier and other applications.
FEATURES
ELECTRICAL CHARACTERISTICS
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
• LOW VOLTAGE, LOW CURRENT OPERATION
• LOW CAPACITANCE FOR WIDE TUNING RANGE
• SMALL PACKAGE OUTLINE:
• LOW HEIGHT PROFILE:
• TWO DIFFERENT DIE TYPES:
• IDEAL FOR >3 GHz OSCILLATORS
1.2 mm x 0.8 mm
Just 0.50 mm high
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
SYMBOLS
|S
|S
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
I
I
I
I
Cre
Cre
h
h
CBO
NF
CBO
NF
EBO
EBO
21E
21E
f
f
FE
FE
T
T
guard pin of capacitances meter.
|
|
2
2
E
|
2
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain
Gain Bandwidth at V
Feedback Capacitance
Insertion Power Gain at V
Noise Figure at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain
Gain Bandwidth at V
Feedback Capacitance
Insertion Power GainIat V
Noise Figure at V
PARAMETERS AND CONDITIONS
PACKAGE OUTLINE
PART NUMBER
1
1
CE
CE
at V
at V
= 1 V, I
= 1 V, I
CE
CE
CE
CE
2
2
= 1 V, I
= 1 V, I
at V
at V
= 1 V, I
= 1 V, I
CE
CE
EB
EB
C
C
CB
CB
CB
= 1 V, I
CB
= 1 V, I
= 3 mA, f = 2 GHz
= 5 mA, f = 2 GHz, Z
= 1 V, I
= 1 V, I
C
C
= 5 V, I
= 5 V, I
= 0.5 V, I
= 0.5 V, I
C
C
= 10 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 10 mA
= 5 mA
(T
RF TWIN TRANSISTOR
C
C
C
C
A
=10 mA, f = 2 GHz
= 20 mA, f = 2 GHz
E
= 0
E
= 0
= 25°C)
= 0
= 0
E
E
NEC's NPN SILICON
= 0, f = 1 MHz
= 0, f = 1 MHz
s
= Z
opt
OUTLINE DIMENSIONS
UNITS
GHz
GHz
nA
nA
pF
dB
dB
nA
nA
dB
dB
pF
California Eastern Laboratories
1.0±0.05
0.8
+0.07
-0.05
10.0
17.0
11.0
Package Outline TD
MIN
7.0
70
50
(TOP VIEW)
UPA861TD
UPA861TD
(Units in mm)
C2
TD
TYP
12.0
20.0
0.22
13.0
C1
E1
110
0.4
9.0
1.5
1.4
75
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
1
2
3
(Top View)
Q1
Q2
6
5
4
MAX
0.30
100
100
140
100
100
100
0.8
2.0
2.5
B1
E2
B2

Related parts for UPA861TD-T3-A

UPA861TD-T3-A Summary of contents

Page 1

... Q2 - Ideal oscillator transistor • IDEAL FOR >3 GHz OSCILLATORS DESCRIPTION NEC's UPA861TD contains one NE894 and one NE687 NPN high frequency silicon bipolar chip. The NE894 is an excellent oscillator chip, featuring high fT and low current, low voltage operation. The NE687 is an excellent buffer transistor, featur- ing low noise and high gain ...

Page 2

... Ambient Temperature REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.5 0.4 0.3 0.2 0 Collector to Base Voltage, V 1,2 ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER Q1 Q2 UPA861TD-T3 1 105 195 Total 150 150 °C -65 to +150 ° 25°C, unless otherwise specified) A 125 150 (º ...

Page 3

... Base to Emitter Voltage, V (V) BE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 500 A 450 A 400 A µ µ µ 350 A µ 30 300 A µ 250 A µ 20 200 A µ 150 A µ 100 A 10 µ µ Collector to Emitter Voltage UPA861TD 1.0 1.0 4 (V) ...

Page 4

... UPA861TD TYPICAL CHARACTERISTICS, cont VOLTAGE vs. COLLECTOR CURRENT 1 000 100 10 0 Collector Current, I (mA) C GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current, I (mA) C INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG MAG 21e 5 0 0.1 1 Frequency, f (GHz 25°C, unless otherwise specified 000 100 ...

Page 5

... Collector Current, I (mA 25°C, unless otherwise specified GHz 100 GHz 100 GHz 100 UPA861TD Q2 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Collector Current, I (mA) C INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 16 12 MSG MAG 21e Collector Current, I (mA) C INSERTION POWER GAIN, MAG, MSG vs ...

Page 6

... UPA861TD TYPICAL CHARACTERISTICS, cont. Q1 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURENT GHz Collector Current, I (mA) C NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURENT GHz Collector Current, I (mA) C NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURENT GHz Collector Current, I (mA 25°C, unless otherwise specified) A NOISE FIGURE, ASSOCIATED GAIN ...

Page 7

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 0.100 to 3.000GHz by 0.050 UPA861TD (Q1 Frequency S 11 GHz MAG ANG 0.10 0.691 - 25.9 0.20 0.625 - 51.3 0.30 0.559 - 72.3 0.40 0.507 - 89.7 0.50 0.470 -104.3 0.60 0.445 -116.3 0.70 0.426 -126.4 0.80 ...

Page 8

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 S -j25 -j50 0.100 to 3.000GHz by 0.050 UPA861TD (Q2 Frequency S 11 GHz MAG ANG 0.10 0.401 - 21.6 0.20 0.358 - 40.9 0.30 0.308 - 56.8 0.40 0.265 - 70.1 0.50 0.231 - 81.9 0.60 0.206 - 92.6 0.70 0.187 -102.5 0.80 ...

Page 9

... TR 1.17 EG 0.75 XTB 5 XTI 3 KF 0.005 AF 6 0.68e-12 0.92 0.26 0.16e-12 0.64 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias Date: 09/02 UPA861TD Q1 Q2 0.53 0. 0.75 0. 0.37 0.55 6e-12 5e-12 11.9 0.05 9.55 0.5 1.78 0.005 69.1 0 1e-9 1.0e-9 1 ...

Page 10

... These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. ...

Page 11

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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