UPA861TD-T3-A CEL, UPA861TD-T3-A Datasheet - Page 4

• Manufacturer Part Number: UPA861TD-T3-A
• Description: TRANSISTOR NPN DUAL TD
• Manufacturer: CEL

Specifications of UPA861TD-T3-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 12GHz, 20GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2dB @ 2GHz
• Power - Max: 195mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 10mA, 1V / 50 @ 5mA, 1V
• Current - Collector (ic) (max): 30mA, 35mA
• Mounting Type: Surface Mount
• Package / Case: 6-MINIMOLD
• Dc Collector/base Gain Hfe Min: 140
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

UPA861TD
TYPICAL CHARACTERISTICS, cont.
1 000
100
16
14
12
10
10
35
30
25
20
15
10
8
6
4
2
0
5
0
0.1
0.1
1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT vs.
= 1 V
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
COLLECTOR CURRENT
DC VOLTAGE vs.
Frequency, f (GHz)
1
MSG
10
1
Q1
|S
21e
|
MAG
2
10
C
C
(mA)
(mA)
V
I
C
CE
V
= 10 mA
CE
= 1 V
= 1 V
100
100
10
(T
A
= 25°C, unless otherwise specified)
1 000
100
10
40
35
30
25
20
15
10
25
20
15
10
5
0
5
0
0.1
0.1
1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT vs.
= 1 V
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
COLLECTOR CURRENT
Collector Current, I
COLLECTOR CURRENT
Collector Current, I
DC VOLTAGE vs.
Frequency, f (GHz)
MSG
1
Q2
10
1
|S
21e
MAG
|
2
10
C
C
V
I
(mA)
(mA)
C
CE
= 20 mA
V
= 1 V
CE
= 1 V
100
100
10