BFP 420F E6327 Infineon Technologies, BFP 420F E6327 Datasheet

TRANSISTOR RF NPN 4.5V TSFP-4

BFP 420F E6327

Manufacturer Part Number
BFP 420F E6327
Description
TRANSISTOR RF NPN 4.5V TSFP-4
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 420F E6327

Package / Case
TSFP-4
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
1.1dB @ 1.8GHz
Gain
19.5dB
Power - Max
160mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 4V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60 @ 5mA @ 4V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Maximum Operating Frequency
25000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.035 A
Power Dissipation
160 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFP 420F E6327
BFP420FE6327INTR
BFP420FE6327XT
SP000012986
NPN Silicon RF Transistor*
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP420F
Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
1
2
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
A
A
S
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59 mm
Noise figure F = 1.1 dB at 1.8 GHz
Transition frequency f
Gold metallization for high reliability
SIEGET  25 GHz f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
outstanding G
> 0 °C
0 °C
111 °C
ms
= 20 dB at 1.8 GHz
Marking
AMs
T
2)
T
- Line
= 25 GHz
1=B
1)
2=E
Pin Configuration
3=C
1
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
4=E
-
-65 ... 150
-65 ... 150
-
Value
160
150
4
4.5
4.1
1.5
15
15
35
3
3
Package
TSFP-4
2007-04-20
1
BFP420F
2
Unit
V
mA
mW
°C

Related parts for BFP 420F E6327

BFP 420F E6327 Summary of contents

Page 1

NPN Silicon RF Transistor* For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59 mm Noise figure 1.8 GHz outstanding 1.8 GHz ms Transition frequency f = ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

... L LXI coupling coefficients between the inductances L referencepin for the couple ports are B`, E`, C For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes - ...

Page 5

For non-linear simulation: · Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. · If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. · Simulation of ...

Page 6

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-4 1.4 ±0.05 0.55 ±0.04 0.2 ±0. 0.2 0.15 ±0.05 ±0.05 0.5 ...

Page 7

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

Related keywords