BFP 420F E6327 Infineon Technologies, BFP 420F E6327 Datasheet - Page 4

• Manufacturer Part Number: BFP 420F E6327
• Description: TRANSISTOR RF NPN 4.5V TSFP-4
• Manufacturer: Infineon Technologies

Specifications of BFP 420F E6327

• Package / Case: TSFP-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB @ 1.8GHz
• Gain: 19.5dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 4V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60 @ 5mA @ 4V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 160 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BFP 420F E6327; BFP420FE6327INTR; BFP420FE6327XT; SP000012986

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
C`-E`-dioden Data (Berkley-Spice 1G.6 Syntax): IS = 3.5 fA; N = 1.02 -, RS = 10
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
The TSFP-4 package has two emitter leads. To avoid high
complexity fo the package equivalent circuit, both leads are
combined in one electrical connection.
R
coupling coefficients between the inductances L
referencepin for the couple ports are B, E, C, B`, E`, C
For examples and ready to use parameters please contact
your local Infineon Technologies distributor or sales office to
obtain a InfineonTechnologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
B
LXI
are series resistors for the inductances L
L
BO
0.20045
28.383
2.0518
19.705
1.1724
3.4849
1.8063
6.7661
1
0.81969
2.3249
0
3
C
BE
L
BI
B’
fA
V
-
V
-
fF
ps
mA
V
ns
-
-
Transistor
Chip
C
CB
E’
E
L
L
EI
EO
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
C’
C’-E’-
Diode
XI
L
ax
CI
and K
and L
72.534
0.48731
7.8287
0.69141
8.5757
0.31111
0.8051
0.42199
0
0.30232
0
0
0.73234
xa-by
yb
4
. The
C
CE
L
are the
CO
EHA07389
-
A
-
A
-
V
-
deg
-
F
-
C
L
L
L
L
L
L
C
C
C
K
K
K
K
K
K
R
R
R
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
Valid up to 6GHz
BO
EO
CO
BI
EI
CI
BE
BC
CE
BO-EO
BO-CO
EO-CO
CI-EI
BI-CI
BI-EI
LBI
LEI
LCI
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
= 0.1
= 0.01
= 0.11
0.22
0.28
0.22
0.42
0.26
0.35
34
2
33
-0.05
-0.08
0.2
0.15
0.11
0.13
1.2432
19.049
1.3325
0.019237
0.72983
0.10105
0.46576
0.23794
234.53
0.3
0.75
1.11
300
2007-04-20
BFP420F
nH
nH
nH
nH
nH
nH
fF
fF
fF
-
-
-
-
-
-
-
fA
-
fA
mA
-
V
fF
-
V
eV
K