MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet - Page 23

• Manufacturer Part Number: MBT6429DW1T1G
• Description: TRANS DUAL NPN 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT6429DW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 100µA, 5V
• Power - Max: 150mW
• Frequency - Transition: 700MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 700 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 500 at 0.01 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MBT6429DW1T1G; MBT6429DW1T1GOSTR

Final Product/Process Change Notification #16266
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NRVB0530T1G
NRVB0530T3
NRVB0530T3G
NRVB0540T1G
NRVB0540T3
NRVB0540T3G
NRVB130T1
NRVB130T1G
NSB1706DMW5T1G
NSB4904DW1T1G
NSQA12VAW5T2G
NSQA6V8AW5T2G
NSR0240HT1G
NSR0340HT1G
NSS20201MR6T1G
NSS20300MR6T1G
NSS30201MR6T1G
NSS35200MR6T1G
NST45010MW6T1G
NST45011MW6T1G
NST489AMT1G
NSTB60BDW1T1G
NSVBAS21HT3
NSVBAS21HT3G
NSVBAS70LT1G
NSVBAT54HT1
NSVBAT54HT1G
NSVMMBD353LT1
NSVMMBD353LT1G
NSVT489AMT1
NSVT489AMT1G
NSVUMC2NT1G
NUP1105LT1G
NUP1105LT3G
NUP2105LT1
NUP2105LT1G
NUP2105LT3G
NZF220DFT1
NZF220DFT1G
PZT2222AT1
PZT2222AT1G
PZT2222AT1H
PZT2222AT3
PZT2222AT3G
PZT2907AT1
PZT2907AT1G
PZT2907AT1H
PZT2907AT3G
PZT3904T1
PZT3904T1G
PZTA42T1
PZTA42T1G
PZTA92T1G
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 23 of 36