MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet - Page 25

• Manufacturer Part Number: MBT6429DW1T1G
• Description: TRANS DUAL NPN 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT6429DW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 100µA, 5V
• Power - Max: 150mW
• Frequency - Transition: 700MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 700 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 500 at 0.01 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MBT6429DW1T1G; MBT6429DW1T1GOSTR

Final Product/Process Change Notification #16266
SMBZ1458LT1
SMBZ1458LT1G
SMBZ1458LT3
SMBZ1458LT3G
SMBZ1460LT1G
SMBZ1461LT1
SMBZ1461LT1G
SMBZ1461LT3G
SMBZ1466LT3
SMBZ1466LT3DS
SMBZ1475LT3G
SMBZ1477-1LT1
SMBZ1477-1LT1G
SMBZ1477LT1G
SMBZ1480LT1
SMBZ1480LT1G
SMBZ1481LT1G
SMBZ1483LT1
SMBZ1483LT1G
SMBZ1484LT1
SMBZ1484LT1G
SMBZ1496LT1
SMBZ1496LT1G
SMBZ1509LT1
SMBZ1509LT1G
SMBZ1516LT1
SMBZ1516LT1G
SMBZ1516LT3G
SMBZ1599LT1
SMBZ1611BT1
SMBZ1611BT1G
SMBZ1650VDLT1
SMBZ1650VDLT1G
SMBZ1650VDLT3G
SMBZ1651VCLT1G
SMBZ1652LT3
SMBZ1660LT1G
SMBZ2606-15LT1
SMBZ2606-15LT1G
SMBZ2606-15LT3
SMBZ2606-15LT3G
SMBZ2606-16LT1G
SMBZ2606-20LT3G
SMBZ2606-21LT3G
SMBZ2606-22LT3G
SMBZ2606-24LT1
SMBZ2606-24LT1G
SMBZ2606-30LT3
SMBZ2606-30LT3G
SMBZ2606-38LT1
SMBZ2606-41LT3
SMBZ2606-41LT3G
SMBZ2606-6LT3G
SMBZ2606-7LT1
SMBZ2606-7LT3
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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