PEMZ1,115 NXP Semiconductors, PEMZ1,115 Datasheet

TRANS NPN/PNP 40V 100MA SOT666

PEMZ1,115

Manufacturer Part Number
PEMZ1,115
Description
TRANS NPN/PNP 40V 100MA SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PEMZ1,115

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
300mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
120
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
100 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
200 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056705115
PEMZ1 T/R
PEMZ1 T/R
Product data sheet
Supersedes data of 2001 Sep 25
DATA SHEET
PEMZ1
NPN/PNP general purpose
transistors
DISCRETE SEMICONDUCTORS
M3D744
2001 Nov 07

Related parts for PEMZ1,115

PEMZ1,115 Summary of contents

Page 1

DATA SHEET PEMZ1 NPN/PNP general purpose transistors Product data sheet Supersedes data of 2001 Sep 25 DISCRETE SEMICONDUCTORS M3D744 2001 Nov 07 ...

Page 2

... NXP Semiconductors NPN/PNP general purpose transistors FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduced required PCB area • ...

Page 3

... NXP Semiconductors NPN/PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. CHARACTERISTICS = 25 °C; unless otherwise specified. T amb SYMBOL PARAMETER Per transistor; for the PNP transistor with negative polarity ...

Page 4

... NXP Semiconductors NPN/PNP general purpose transistors 400 handbook, halfpage h FE 300 200 100 0 − TR1 (NPN Fig.2 DC current gain as a function of collector current; typical values 2001 Nov 07 MHC005 400 handbook, halfpage h FE 300 200 100 2 3 − (mA) TR2 (PNP); V Fig.3 4 Product data sheet 0 − ...

Page 5

... NXP Semiconductors NPN/PNP general purpose transistors PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2001 Nov scale 1.3 1.7 0.3 1.0 0.5 1 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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