PEMZ1,115 NXP Semiconductors, PEMZ1,115 Datasheet - Page 4

• Manufacturer Part Number: PEMZ1,115
• Description: TRANS NPN/PNP 40V 100MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMZ1,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 120
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 100 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056705115; PEMZ1 T/R; PEMZ1 T/R

NXP Semiconductors
2001 Nov 07
handbook, halfpage
NPN/PNP general purpose transistors
TR1 (NPN); V
Fig.2
h FE
400
300
200
100
0
10
−1
DC current gain as a function of collector
current; typical values
CE
= 5 V.
1
10
10
2
I C (mA)
MHC005
10
3
4
handbook, halfpage
TR2 (PNP); V
Fig.3
h FE
400
300
200
100
−10
0
−1
DC current gain as a function of collector
current; typical values
CE
= −5 V.
−1
−10
−10
Product data sheet
2
I C (mA)
MHC004
PEMZ1
−10
3