PEMT1,115 NXP Semiconductors, PEMT1,115 Datasheet - Page 3

• Manufacturer Part Number: PEMT1,115
• Description: TRANS PNP 40V 100MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMT1,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 120
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 40 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056707115; PEMT1 T/R; PEMT1 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Nov 07
handbook, halfpage
R
Per transistor
I
I
h
V
C
f
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
PNP general purpose double transistor
th j-a
c
V
Fig.2
CE
= 25 °C; unless otherwise specified.
h FE
400
300
200
100
= −5 V.
−10
0
−1
DC current gain as a function of collector
current; typical values.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
−1
PARAMETER
−10
PARAMETER
−10
2
I C (mA)
MHB987
−10
V
V
V
V
I
V
V
f = 100 MHz
C
CB
CB
EB
CE
CB
CE
= −50 mA; I
3
= −4 V; I
= −30 V; I
= −30 V; I
= −6 V; I
= −12 V; I
= −12 V; I
CONDITIONS
3
C
C
notes 1 and 2
E
E
B
E
C
= 0
= −1 mA
= 0
= 0; T
= −5 mA; note 1
= I
= −2 mA;
CONDITIONS
e
= 0; f = 1 MHz
j
= 150 °C
−
−
−
120
−
−
100
MIN.
VALUE
416
−100
−10
−100
−
−200
2.2
−
MAX.
Product data sheet
PEMT1
UNIT
K/W
nA
μA
nA
mV
pF
MHz
UNIT