MBT3906DW1T1 ON Semiconductor, MBT3906DW1T1 Datasheet - Page 14

• Manufacturer Part Number: MBT3906DW1T1
• Description: TRANS DUAL GP 200MA 40V SOT363
• Manufacturer: ON Semiconductor

Specifications of MBT3906DW1T1

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MBT3906DW1T1OSCT

Final Product/Process Change Notification #16266
MM3Z7V5ST1G
MM3Z7V5T1G
MM3Z8V2ST1G
MM3Z8V2T1G
MM3Z8V2T1H
MM3Z9V1ST1G
MM3Z9V1T1G
MMBD101LT1G
MMBD301LT1
MMBD301LT1G
MMBD301LT1H
MMBD301LT3G
MMBD352LT1
MMBD352LT1G
MMBD353LT1G
MMBD354LT1G
MMBD355LT1G
MMBD452LT1G
MMBD701LT1
MMBD701LT1G
MMBT2369ALT1
MMBT2369ALT1G
MMBT2369LT1
MMBT2369LT1G
MMBT2369LT3G
MMBZ12VALT1G
MMBZ15VALT1
MMBZ15VALT1G
MMBZ15VDLT1
MMBZ15VDLT1G
MMBZ15VDLT1H
MMBZ15VDLT3G
MMBZ18VALT1
MMBZ18VALT1G
MMBZ20VALT1
MMBZ20VALT1G
MMBZ27VALT1
MMBZ27VALT1G
MMBZ27VALT3G
MMBZ27VCLT1
MMBZ27VCLT1G
MMBZ33VALT1
MMBZ33VALT1G
MMBZ33VALT3G
MMBZ5221BLT1G
MMBZ5222BLT1G
MMBZ5223BLT1G
MMBZ5225BLT1G
MMBZ5226BLT1G
MMBZ5226BLT1H
MMBZ5227BLT1G
MMBZ5227BLT1H
MMBZ5228BLT1G
MMBZ5228BLT1H
MMBZ5229BLT1
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 14 of 36