UMH11NTN Rohm Semiconductor, UMH11NTN Datasheet - Page 2

• Manufacturer Part Number: UMH11NTN
• Description: TRANS DUAL NPN 50V 50MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMH11NTN

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 100mA
• Operating Temperature: RoHS Compliant
• Dc Current Gain Hfe: 30
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UMH11NTNTR

Transistors
UMH11N / IMH11A
FElectrical characteristics (Ta = 25_C)
FPackaging specifications
FElectrical characteristic curves
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