UMH11NTN Rohm Semiconductor, UMH11NTN Datasheet - Page 2
UMH11NTN
Manufacturer Part Number
UMH11NTN
Description
TRANS DUAL NPN 50V 50MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet
1.UMH11NTN.pdf
(3 pages)
Specifications of UMH11NTN
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
30
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UMH11NTNTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UMH11NTN
Manufacturer:
ROHM
Quantity:
33 000
Company:
Part Number:
UMH11NTN
Manufacturer:
ROHM
Quantity:
520 000
Part Number:
UMH11NTN
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
UMH11N / IMH11A
FElectrical characteristics (Ta = 25_C)
FPackaging specifications
FElectrical characteristic curves
552