MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 73

• Manufacturer Part Number: MT46H16M16LFBF-6:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H16M16LFBF-6:H

• Package: 60VFBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 166 MHz
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 35: Consecutive WRITE-to-WRITE
Figure 36: Nonconsecutive WRITE-to-WRITE
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
Command
Command
Address
Address
DQS
DQS
DQ
DQ
CK#
CK#
DM
DM
CK
CK
3
3
Notes:
Notes:
WRITE
WRITE
Bank,
Col b
Bank,
Col b
T0
T0
1, 2
t
1. Each WRITE command can be to any bank.
2. An uninterrupted burst of 4 is shown.
3. D
1, 2
1. Each WRITE command can be to any bank.
2. An uninterrupted burst of 4 is shown.
3. D
t
DQSS (NOM)
DQSS (NOM)
IN
IN
b (n) = data-in for column b (n).
b (n) = data-in for column b (n).
NOP
NOP
D
D
T1
T1
b
b
IN
IN
T1n
T1n
b+1
b+1
D
D
IN
IN
WRITE
Bank,
Col n
b+2
b+2
D
NOP
D
T2
T2
IN
IN
1, 2
73
T2n
b+3
T2n
b+3
D
D
IN
IN
256Mb: x16, x32 Mobile LPDDR SDRAM
WRITE
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Bank,
NOP
Col n
D
T3
T3
n
IN
1,2
Don’t Care
Don’t Care
T3n
n+1
D
IN
n+2
NOP
D
D
T4
T4
NOP
n
IN
IN
T4n
T4n
n+1
n+3
D
D
IN
IN
Transitioning Data
Transitioning Data
© 2008 Micron Technology, Inc. All rights reserved.
WRITE Operation
n+2
D
T5
NOP
T5
NOP
IN
T5n
n+3
D
IN