MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 73
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MT46H16M16LFBF-6:H
Manufacturer Part Number
MT46H16M16LFBF-6:H
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Series
-r
Specifications of MT46H16M16LFBF-6:H
Package
60VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
166 MHz
Maximum Random Access Time
6.5|5 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Package / Case
60-VFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46H16M16LFBF-6:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT46H16M16LFBF-6:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 35: Consecutive WRITE-to-WRITE
Figure 36: Nonconsecutive WRITE-to-WRITE
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
Command
Command
Address
Address
DQS
DQS
DQ
DQ
CK#
CK#
DM
DM
CK
CK
3
3
Notes:
Notes:
WRITE
WRITE
Bank,
Col b
Bank,
Col b
T0
T0
1, 2
t
1. Each WRITE command can be to any bank.
2. An uninterrupted burst of 4 is shown.
3. D
1, 2
1. Each WRITE command can be to any bank.
2. An uninterrupted burst of 4 is shown.
3. D
t
DQSS (NOM)
DQSS (NOM)
IN
IN
b (n) = data-in for column b (n).
b (n) = data-in for column b (n).
NOP
NOP
D
D
T1
T1
b
b
IN
IN
T1n
T1n
b+1
b+1
D
D
IN
IN
WRITE
Bank,
Col n
b+2
b+2
D
NOP
D
T2
T2
IN
IN
1, 2
73
T2n
b+3
T2n
b+3
D
D
IN
IN
256Mb: x16, x32 Mobile LPDDR SDRAM
WRITE
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Bank,
NOP
Col n
D
T3
T3
n
IN
1,2
Don’t Care
Don’t Care
T3n
n+1
D
IN
n+2
NOP
D
D
T4
T4
NOP
n
IN
IN
T4n
T4n
n+1
n+3
D
D
IN
IN
Transitioning Data
Transitioning Data
© 2008 Micron Technology, Inc. All rights reserved.
WRITE Operation
n+2
D
T5
NOP
T5
NOP
IN
T5n
n+3
D
IN