MUN5315DW1T1G ON Semiconductor, MUN5315DW1T1G Datasheet - Page 28

• Manufacturer Part Number: MUN5315DW1T1G
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5315DW1T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Rf Transistor Case: SC-88
• No. Of Pins: 6
• Continuous Collector Current Max: 100mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -

0.001
12
10
0.01
8
6
4
2
0
0.1
0
1
0
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G NPN TRANSISTOR
5
I
C
/I
V
B
R
Figure 110. Output Capacitance
10
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
Figure 108. V
C
15
, COLLECTOR CURRENT (mA)
−25°C
20
20
25
0.1
25°C
10
CE(sat)
1
0
30
T
30
A
75°C
Figure 112. Input Voltage versus Output
versus I
= −25°C
75°C
35
10
I
f = 1 MHz
I
T
C
40
E
A
, COLLECTOR CURRENT (mA)
= 0 V
25°C
40
C
= 25°C
http://onsemi.com
45
20
50
Current
50
28
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
75°C
V
Figure 111. Output Current versus Input
1
O
T
40
A
= 0.2 V
= −25°C
2
Figure 109. DC Current Gain
25°C
I
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
50
T
4
A
Voltage
= −25°C
5
10
75°C
6
25°C
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10