MUN5315DW1T1G ON Semiconductor, MUN5315DW1T1G Datasheet - Page 32

• Manufacturer Part Number: MUN5315DW1T1G
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5315DW1T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Rf Transistor Case: SC-88
• No. Of Pins: 6
• Continuous Collector Current Max: 100mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -

1.0
0.8
0.6
0.4
0.2
1.4
1.2
0.01
0
0.1
0
1
0
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G NPN TRANSISTOR
5
25°C
V
10
Figure 130. Output Capacitance
R
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
Figure 128. V
C
, COLLECTOR CURRENT (mA)
20
15
20
100
30
T
10
A
CE(sat)
1
25
= −25°C
0
30
25°C
Figure 132. Input Voltage versus Output
40
versus I
35
f = 1 MHz
I
T
5
E
I
A
C
75°C
= 0 V
, COLLECTOR CURRENT (mA)
I
= 25°C
50
C
C
40
/I
B
http://onsemi.com
= 10
45
T
10
A
60
Current
= −25°C
50
32
0.001
1000
0.01
15
100
100
0.1
10
10
1
0
1
75°C
V
O
1
Figure 131. Output Current versus Input
= 0.2 V
20
2
Figure 129. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
3
, INPUT VOLTAGE (VOLTS)
25
4
25°C
Voltage
5
10
75°C
6
T
A
75°C
7
= −25°C
T
A
= −25°C
8
V
CE
V
9
= 10 V
O
25°C
= 5 V
10
100
11