NSTB1002DXV5T1G ON Semiconductor, NSTB1002DXV5T1G Datasheet - Page 3

• Manufacturer Part Number: NSTB1002DXV5T1G
• Description: TRANSISTOR BRT NPN/PNP SOT-553
• Manufacturer: ON Semiconductor

Specifications of NSTB1002DXV5T1G

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 200mA
• Voltage - Collector Emitter Breakdown (max): 50V, 40V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553, SOT-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
Input Resistor
Resistor Ratio
(I
(I
(V
(I
(V
(V
C
C
C
CE
CC
CC
= 10 mA, I
= 2.0 mA, I
= 10 mA, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
Characteristic
E
C
B
B
= 0)
B
B
= 0.3 mA)
= 5.0 mA)
= 0)
= 2.5 V, R
= 0.5 V, R
L
L
= 1.0 kW)
= 1.0 kW)
250
200
150
100
50
NSTB1002DXV5T1G, NSTB1002DXV5T5G
0
−50
(T
A
= 25°C unless otherwise noted)
0
T
Figure 1. Derating Curve
A
, AMBIENT TEMPERATURE (°C)
R
http://onsemi.com
qJA
= 833°C/W
V
V
V
Symbol
(BR)CBO
(BR)CEO
R1/R2
CE(SAT)
V
V
h
R1
FE
OH
OL
50
3
100
Min
4.9
0.8
50
50
80
33
−
−
150
Typ
140
1.0
47
−
−
−
−
−
Max
0.25
0.2
1.2
61
−
−
−
−
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW