NSTB1002DXV5T1G ON Semiconductor, NSTB1002DXV5T1G Datasheet - Page 5

• Manufacturer Part Number: NSTB1002DXV5T1G
• Description: TRANSISTOR BRT NPN/PNP SOT-553
• Manufacturer: ON Semiconductor

Specifications of NSTB1002DXV5T1G

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 200mA
• Voltage - Collector Emitter Breakdown (max): 50V, 40V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553, SOT-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.8
0.6
0.2
0.1
0.4
10
1
0
1
0
0
I
C
/I
B
= 10
10
Figure 5. Output Capacitance
V
Figure 3. V
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR
20
20
CE(sat)
100
0.1
NSTB1002DXV5T1G, NSTB1002DXV5T5G
10
1
T
A
0
30
versus I
Figure 7. Input Voltage versus Output Current
= −25°C
V
O
= 0.2 V
10
C
40
f = 1 MHz
I
T
E
40
A
I
= 0 mA
C
= 25°C
, COLLECTOR CURRENT (mA)
http://onsemi.com
75°C
25°C
20
50
50
5
T
0.001
A
30
1000
0.01
100
100
= −25°C
0.1
10
10
1
1
0
Figure 6. Output Current versus Input Voltage
40
75°C
25°C
75°C
2
Figure 4. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
in
50
, INPUT VOLTAGE (VOLTS)
25°C
4
10
T
A
= −25°C
6
V
O
= 5 V
T
A
V
8
= 75°C
CE
= 10 V
25°C
−25°C
100
10