BUL810 STMicroelectronics, BUL810 Datasheet - Page 3

• Manufacturer Part Number: BUL810
• Description: TRANSISTOR POWER NPN TO-247
• Manufacturer: STMicroelectronics

Specifications of BUL810

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 5V @ 2.4A, 12A
• Current - Collector Cutoff (max): 250µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 5A, 5V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 497-7209-5; BUL810

BUL810
2
Electrical characteristics
(T
Table 4.
1. Pulse duration = 300 µs, duty cycle
V
V
V
CEO(sus)
case
Symbol
CE(sat)
BE(sat)
h
V
I
I
FE
CES
CEO
EBO
t
t
t
t
s
s
f
f
= 25 °C unless otherwise specified)
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Collector cut-off current
(I
Collector-emitter
sustaining voltage
(I
Emitter-base voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Inductive load
Storage time
Fall time
Inductive load
Storage time
Fall time
B
B
C
BE
= 0)
= 0)
= 0)
= 0)
Parameter
≤
1.5%
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
V
V
T
C
E
C
C
C
C
C
C
C
C
C
c
CE
CE
CE
CL
BE(off)
CL
BE(off)
= 100 mA
= 10 mA
= 5 A
= 8 A
= 12 A
= 5 A
= 8 A
= 10 mA
= 5 A
= 8 A
= 8 A
= 100 °C
= 350 V
= 350 V
= 1000 V
= 1000 V T
= 450 V
Test conditions
= -5 V
= -5 V
R
R
I
I
I
I
I
V
L = 200 µH
L = 200 µH
C
V
I
I
B
B
B
B
B
B1
B1
BB
BB
CE
CE
= 125 °C
= 1 A
= 1.6 A
= 2.4 A
= 1 A
= 1.6 A
= 1.6 A
= 1.6 A
= 0.4 Ω
= 0.4 Ω
= 5 V
= 5 V
Min.
Electrical characteristics
450
10
10
9
Typ.
1.5
1.9
55
80
Max.
100
500
250
110
1.5
1.3
1.6
2.3
40
1
5
Unit
µA
µA
µA
µs
ns
µs
ns
V
V
V
V
V
V
V
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