MMBT2222ATT1G ON Semiconductor, MMBT2222ATT1G Datasheet - Page 2

• Manufacturer Part Number: MMBT2222ATT1G
• Description: TRANS NPN GP 75V 600MA SC75-3
• Manufacturer: ON Semiconductor

Specifications of MMBT2222ATT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 35 at 0.1 mA at 10 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT2222ATT1G; MMBT2222ATT1GOSTR

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(V
(V
(V
(V
(V
C
C
E
C
C
C
C
C
C
C
C
C
C
CE
CE
CB
EB
CE
CE
CE
CE
CE
= 10 mAdc, I
= 1.0 mAdc, I
= 10 mAdc, I
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 150 mAdc, V
= 500 mAdc, V
= 150 mAdc, I
= 500 mAdc, I
= 150 mAdc, I
= 500 mAdc, I
= 20 mAdc, V
= 0.5 Vdc, I
= 60 Vdc, V
= 60 Vdc, V
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
C
E
E
C
C
C
C
C
B
C
CE
CE
EB
EB
= 0)
= 0)
B
B
B
B
CE
CE
CE
CE
= 0, f = 1.0 MHz)
= 10 mAdc, f = 1.0 kHz)
= 10 mAdc, f = 1.0 kHz)
= 10 mAdc, f = 1.0 kHz)
= 10 mAdc, f = 1.0 kHz)
= 100 mAdc, R
= 0)
= 0, f = 1.0 MHz)
= 15 mAdc)
= 50 mAdc)
= 15 mAdc)
= 50 mAdc)
= 10 Vdc)
= 20 Vdc, f = 100 MHz)
= 3.0 Vdc)
= 3.0 Vdc)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
S
Characteristic
= 1.0 k ohms, f = 1.0 kHz)
(T
A
(V
(V
= 25°C unless otherwise noted)
CC
I
CC
I
C
B1
= 150 mAdc, I
= 3.0 Vdc, V
= 30 Vdc, I
= I
B2
= 15 mAdc)
http://onsemi.com
C
BE
= 150 mAdc,
B1
= − 0.5 Vdc,
= 15 mAdc)
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
H
C
h
I
CEX
h
NF
h
h
BL
f
t
t
obo
t
t
FE
ibo
oe
T
ie
re
fe
d
s
r
f
0.25
Min
100
300
6.0
0.6
40
75
35
50
75
40
75
25
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
1.25
375
200
225
0.3
1.0
1.2
2.0
8.0
4.0
4.0
20
10
30
10
25
60
−
−
−
−
−
−
−
−
−
X 10
mmhos
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW
pF
pF
dB
ns
ns
−
−
− 4