MMBT2222ATT1G ON Semiconductor, MMBT2222ATT1G Datasheet - Page 3

• Manufacturer Part Number: MMBT2222ATT1G
• Description: TRANS NPN GP 75V 600MA SC75-3
• Manufacturer: ON Semiconductor

Specifications of MMBT2222ATT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 35 at 0.1 mA at 10 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT2222ATT1G; MMBT2222ATT1GOSTR

- 2 V
+16 V
0
1000
700
500
300
200
100
1.0
0.8
0.6
0.4
0.2
70
50
30
20
10
0.005
0
0.1
< 2 ns
Figure 1. Turn−On Time
0.01
0.2
I
C
= 1.0 mA
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
0.3
0.02 0.03
0.5 0.7
1 kW
SWITCHING TIME EQUIVALENT TEST CIRCUITS
0.05
1.0
10 mA
Figure 4. Collector Saturation Region
+ 30 V
2.0
0.1
200
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
C
Figure 3. DC Current Gain
3.0
S
T
I
* < 10 pF
C
J
, COLLECTOR CURRENT (mA)
= 125°C
0.2
25°C
I
http://onsemi.com
-55°C
B
, BASE CURRENT (mA)
5.0 7.0
0.3
V
V
3
CE
CE
10
0.5
= 1.0 V
= 10 V
+16 V
0
-14 V
1.0
20
30
150 mA
2.0
Figure 2. Turn−Off Time
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
< 20 ns
50 70 100
3.0
5.0
1 k
1N914
200
10
- 4 V
300
500 mA
+ 30 V
20
200
500 700
T
J
C
= 25°C
30
S
* < 10 pF
1.0 k
50