BCR 141 E6327 Infineon Technologies, BCR 141 E6327 Datasheet

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BCR 141 E6327

Manufacturer Part Number
BCR 141 E6327
Description
TRANSISTOR NPN DGTL AF SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR 141 E6327

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
130MHz
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
22 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR141E6327XT
SP000010769
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
• Built in bias resistor (R
• BCR141S : Two internally isolated
• BCR141S: For orientation in reel see
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCR141W
Type
BCR141
BCR141S
BCR141W
1
Pb-containing package may be available upon special request
driver circuit
transistors with good matching
in one multichip package
package information below
1
B
R
1
R
2
C
3
E
EHA07184
2
BCR141S
TR1
C1
E1
6
1
R
R
2
1
1
B2
B1
5
2
R
=22kΩ, R
R
1
2
E2
C2
4
3
EHA07174
TR2
Marking
WDs
WDs
WDs
2
=22kΩ)
1)
1=B
1=E1
1=B
2=E
2=B1
2=E
1
Pin Configuration
3=C
3=C2
3=C
-
4=E2
-
-
5=B2
-
-
6=C1
-
BCR141...
Package
SOT23
SOT363
SOT323
2010-06-07

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BCR 141 E6327 Summary of contents

Page 1

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R =22kΩ • BCR141S : Two internally isolated transistors with good matching in one multichip package • BCR141S: For orientation in ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipation- ≤ 118°C BCR141 ≤ 115°C BCR141S ≤ 124°C BCR141W Junction temperature Storage temperature Thermal Resistance Parameter ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Collector-base cutoff current ...

Page 4

DC current gain (common emitter configuration -40 °C -25 °C 25 °C 85 °C 125 ° Input on ...

Page 5

Total power dissipation P BCR141 300 mW 250 225 200 175 150 125 100 Total power dissipation P BCR141W 300 mW 250 225 200 175 150 125 100 75 50 ...

Page 6

Permissible Pulse Load = ƒ totmax totDC p BCR141 0.005 0.01 0.02 0.05 0.1 0.2 0 ...

Page 7

Permissible Pulse Load = ƒ totmax totDC p BCR141W 0.005 0.01 0.02 0.05 0.1 0.2 0 ...

Page 8

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 9

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT323 2 ±0.2 0.1 MAX. +0.1 3x 0.3 -0.05 0 0.65 0.65 0.2 0.6 ...

Page 10

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 11

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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