IRFH8337TRPBF International Rectifier, IRFH8337TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFH8337TRPBF
• Description: MOSFET N-CH 30V 12A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH8337TRPBF

• Input Capacitance (ciss) @ Vds: 790pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.8 mOhm @ 16.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Power - Max: 3.2W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 18.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 27 W
• Gate Charge Qg: 4.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH8337TRPBFTR

IRFH8337PbF
Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
35
30
25
20
15
10
100
Fig 9. Maximum Drain Current vs.
1.0
0.001
5
0
10
0.01
0.1
25
10
Case (Bottom) Temperature
0.2
1
1E-006
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
0.4
D = 0.50
T J = 150°C
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
0.01
0.02
0.20
0.10
0.05
0.6
SINGLE PULSE
( THERMAL RESPONSE )
75
Limited By Source
Bonding Technology
0.8
1E-005
T J = 25°C
100
1.0
1.2
V GS = 0V
125
1.4
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
1.6
1000
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
10
Fig 8. Maximum Safe Operating Area
0.001
1
-75 -50 -25
Fig 10. Threshold Voltage vs. Temperature
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 25μA
I D = 250μA
I D = 1.0mA
I D = 1.0A
Limited by
Source Bonding
Technology
V DS , Drain-to-Source Voltage (V)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
1
0.01
25
1msec
DC
50
10msec
100μsec
75 100 125 150
10
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0.1
100