IRFH8337TRPBF International Rectifier, IRFH8337TRPBF Datasheet - Page 9

• Manufacturer Part Number: IRFH8337TRPBF
• Description: MOSFET N-CH 30V 12A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH8337TRPBF

• Input Capacitance (ciss) @ Vds: 790pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.8 mOhm @ 16.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Power - Max: 3.2W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 18.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 27 W
• Gate Charge Qg: 4.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH8337TRPBFTR

www.irf.com
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Qualification information
Qualification level
Moisture Sensitivity Level
RoHS compliant
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 16.2A by source bonding technology.
Starting T
θ
is measured at
Qualification standards can be found at International Rectifier’s web site
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
http://www.irf.com/product-info/reliability
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: [phone]
J
= 25°C, L = 0.22mH, R
T
J
of approximately 90°C.
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G
= 50Ω, I
AS
= 16.2A.
PQFN 5mm x 6mm
(per JE DE C JE S D47F
Visit us at www.irf.com for sales contact information. 04/2011
Data and specifications subject to change without notice.
Cons umer
Yes
(per JE DE C J-S T D-020D
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guidelines )
MS L3
IRFH8337PbF
TAC Fax: [phone]
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)
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