NTMFS4826NET1G ON Semiconductor, NTMFS4826NET1G Datasheet - Page 5

• Manufacturer Part Number: NTMFS4826NET1G
• Description: MOSFET N-CH 30V 66A SO-8FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS4826NET1G

• Input Capacitance (ciss) @ Vds: 1850pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Power - Max: 870mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Forward Transconductance Gfs (max / Min): 62 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.16 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Fall Time: 5.2 ns
• Gate Charge Qg: 13.5 nC
• Rise Time: 39.8 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
100
100
120
100
0.1
10
10
80
60
40
20
1
1
0
0.1
1
0
V
Single Pulse
T
Figure 9. Resistive Switching Time Variation
V
ID = 15 A
V
Figure 11. Maximum Rated Forward Biased
C
GS
10
DS
GS
= 25°C
= 20 V
= 15 V
= 11.5 V
t
V
t
d(on)
d(off)
20
DS
Figure 13. g
t
t
r
, DRAIN−TO−SOURCE VOLTAGE (V)
f
30
R
Thermal Limit
Package Limit
R
DS(on)
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
DRAIN CURRENT (A)
40
1
Limit
50
FS
vs. Drain Current
10
60
70
80
10
TYPICAL CHARACTERISTICS
V
90
DS
100 110
= 1.5 V
10 ms
100 ms
1 ms
10 ms
dc
http://onsemi.com
100
100
120
5
100
100
110
30
28
26
24
22
20
18
16
14
12
10
90
80
70
60
50
40
30
20
10
10
8
6
4
2
0
0
1
0.4
25
0.1
Figure 10. Diode Forward Voltage vs. Current
Figure 12. Maximum Avalanche Energy vs.
T
J
V
T
Figure 14. Avalanche Characteristics
, STARTING JUNCTION TEMPERATURE(°C)
V
125°C
GS
J
SD
= 25°C
0.5
50
Starting Junction Temperature
1
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (V)
PULSE WIDTH (ms)
0.6
75
10
100°C
100
100
0.7
25°C
ID = 27 A
1000
125
0.8
10,000
150
0.9