NTMFS4826NET1G ON Semiconductor, NTMFS4826NET1G Datasheet

NTMFS4826NET1G

Manufacturer Part Number

NTMFS4826NET1G

Description

MOSFET N-CH 30V 66A SO-8FL

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.NTMFS4826NET3G.pdf (6 pages)

Specifications of NTMFS4826NET1G

Input Capacitance (ciss) @ Vds

1850pF @ 12V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

5.9 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

9.5A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

20nC @ 4.5V

Power - Max

870mW

Mounting Type

Package / Case

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

4.3 mOhms

Forward Transconductance Gfs (max / Min)

62 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

15 A

Power Dissipation

2.16 W

Maximum Operating Temperature

+ 85 C

Mounting Style

SMD/SMT

Fall Time

5.2 ns

Gate Charge Qg

13.5 nC

Rise Time

39.8 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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NTMFS4826NE

Power MOSFET

30 V, 66 A, Single N−Channel, SO−8FL

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

December, 2010 − Rev. 0

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

10 sec

Power Dissipation

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Current limited by package

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain−to−Source Avalanche

Energy (V

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

Dual Sided Cooling Capability

These are Pb−Free Devices*

CPU Power Delivery

DC−DC Converters

High Side Switching

qJA

qJA,

qJA

qJC

= 27 A

(Note 1)

(Note 2)

(Note 1)

t v 10 sec

DS(on)

qJA

qJC

, L = 0.3 mH, R

= 50 V, V

to Minimize Conduction Losses

Parameter

Steady

State

=10ms

= 10 V,

= 25 W)

= 25°C unless otherwise stated)

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

Dmaxpkg

dV/dt

EAS

DSS

STG

−40 to

Value

+150

10.8

2.16

24.3

17.5

5.67

0.87

47.8

41.7

±20

132

100

109

260

9.5

6.9

Unit

V/ns

°C

*For additional information on our Pb−Free strategy

†For information on tape and reel specifications,

NTMFS4826NET1G

NTMFS4826NET3G

and soldering details, please download the ON

Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SO−8 FLAT LEAD

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

CASE 488AA

(BR)DSS

(Note: Microdot may be in either location)

30 V

STYLE 1

Device

G (4)

ORDERING INFORMATION

N−CHANNEL MOSFET

http://onsemi.com

8.7 mW @ 4.5 V

5.9 mW @ 10 V

D (5,6)

= Assembly Location

= Year

= Work Week

= Pb−Free Package

DS(ON)

(Pb−Free)

Package

SO−8FL

Publication Order Number:

MAX

S (1,2,3)

MARKING

DIAGRAM

NTMFS4826NE/D

4826NE

AYWWG

Tape & Reel

Shipping

1500 /

5000 /

66 A

55 A

MAX

†

Related parts for NTMFS4826NET1G

NTMFS4826NET1G Summary of contents

Page 1

... Microdot may be in either location) I 132 100 A Dmaxpkg T , −40 to ° +150 STG NTMFS4826NET1G I 41 dV/dt 6 V/ns NTMFS4826NET3G EAS 109 mJ †For information on tape and reel specifications, including part orientation and tape sizes, please T 260 °C refer to our Tape and Reel Packaging Specifications L Brochure, BRD8011/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) Junction−to−Ambient − sec Junction−to−Top 1. Surface−mounted on FR4 board using 1 sq−in pad Cu. 2. Surface−mounted ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance ...

Page 4

V , GATE−TO−SOURCE VOLTAGE (V) GS Figure 3. On−Resistance vs. Gate−to−Source Voltage 1. 1. ...

Page 5

11 100 t d(off d(on GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation ...

Page 6

... M 3.200 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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