NTMFS4923NET1G ON Semiconductor, NTMFS4923NET1G Datasheet

NTMFS4923NET1G

Manufacturer Part Number

NTMFS4923NET1G

Description

MOSFET N-CH 30V 91A SO-8FL

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.NTMFS4923NET3G.pdf (7 pages)

Specifications of NTMFS4923NET1G

Input Capacitance (ciss) @ Vds

4850pF @ 15V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.3 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

12.7A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

22nC @ 4.5V

Power - Max

930mW

Mounting Type

Package / Case

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMFS4923NET1G

Manufacturer:

ON Semiconductor

Quantity:

1 200

Current page: 1 of 7
Download datasheet (114Kb)

NTMFS4923NE

Power MOSFET

30 V, 91 A, Single N−Channel, SO−8 FL

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

December, 2010 − Rev. 0

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

10 s (Note 1)

Power Dissipation

(Note 1)

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Current Limited by Package

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source DV/DT

Single Pulse Drain−to−Source Avalanche

Energy T

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

Dual Sided Cooling Capability

These Devices are Pb−Free, Halogen Free and are RoHS Compliant

CPU Power Delivery, DC−DC Converters

qJA

qJC

= 47 A

(Note 1)

≤ 10 s

(Note 2)

(Note 1)

DS(on)

qJA

qJC

= 25°C, V

, L = 0.1 mH, R

≤

to Minimize Conduction Losses

Parameter

Steady

State

= 24 V, V

= 25°C, t

= 25 W

= 25°C unless otherwise stated)

= 100°C

= 10 V,

= 10 ms

= 25°C

= 85°C

= 25°C

Symbol

dV/d

Dmax

DSS

STG

−40 to

Value

+150

21.4

13.5

2.63

38.8

24.5

12.7

0.93

±20

275

100

110

260

8.7

8.0

Unit

V/ns

°C

†For information on tape and reel specifications,

NTMFS4923NET1G

NTMFS4923NET3G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SO−8 FLAT LEAD

(BR)DSS

CASE 488AA

30 V

(Note: Microdot may be in either location)

STYLE 1

Device

G (4)

ORDERING INFORMATION

= Assembly Location

= Year

= Work Week

= Pb−Free Package

http://onsemi.com

N−CHANNEL MOSFET

4.8 mW @ 4.5 V

3.3 mW @ 10 V

D (5,6)

DS(ON)

(Pb−Free)

Package

SO−8 FL

Publication Order Number:

MAX

S (1,2,3)

NTMFS4923NE/D

MARKING

DIAGRAM

AYWWG

4923NE

Tape & Reel

Shipping

1500 /

5000 /

91 A

75 A

MAX

†

Related parts for NTMFS4923NET1G

NTMFS4923NET1G Summary of contents

Page 1

... (Note: Microdot may be in either location) I 275 100 A Dmax T , −40 to ° +150 STG NTMFS4923NET1G dV/d 6 V/ns t NTMFS4923NET3G E 110 mJ AS †For information on tape and reel specifications, T 260 °C including part orientation and tape sizes, please L refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ (Note 3) Junction−to−Top 3. Surface−mounted on FR4 board using 1 sq−in pad Cu. ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance ...

Page 4

4.0 V 160 3.8 V 140 4.5 3.6 V 120 3.4 V 100 ...

Page 5

C iss 3500 3000 2500 2000 C oss 1500 1000 500 C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

Duty Cycle = 50% 100 20% 10 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal ...

Page 7

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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