NTMFS4923NET1G ON Semiconductor, NTMFS4923NET1G Datasheet - Page 4

• Manufacturer Part Number: NTMFS4923NET1G
• Description: MOSFET N-CH 30V 91A SO-8FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS4923NET1G

• Input Capacitance (ciss) @ Vds: 4850pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Power - Max: 930mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.014
0.013
0.012
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.011
180
160
140
120
100
80
60
40
20
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
2.0
−50
0
4.5
7 V
10 V
I
V
D
GS
Figure 5. On−Resistance Variation with
= 30 A
−25
3.0
Figure 1. On−Region Characteristics
V
= 10 V
DS
Figure 3. On−Resistance vs. V
T
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
4.0
1
0
4.2 V
5.0
Temperature
25
V
V
GS
GS
6.0
2
50
(V)
= 4.0 V
3.4 V
3.0 V
2.8 V
3.8 V
3.6 V
3.2 V
2.6 V
7.0
75
TYPICAL CHARACTERISTICS
8.0
3
100
GS
I
T
T
D
J
J
2.4 V
= 30 A
= 25°C
= 25°C
9.0
http://onsemi.com
125
150
4
10
4
0.0050
0.0048
0.0046
0.0044
0.0042
0.0040
0.0038
0.0036
0.0034
0.0032
0.0030
0.0028
0.0026
0.0024
0.0022
0.0020
10,000
1000
160
140
120
100
100
80
60
40
20
10
0
1.0
20
5
Figure 4. On−Resistance vs. Drain Current and
V
Figure 6. Drain−to−Source Leakage Current
T
V
GS
J
DS
= 25°C
40
= 0 V
V
1.5
V
= 10 V
Figure 2. Transfer Characteristics
DS
GS
10
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
T
J
60
= 125°C
I
D
T
2.0
, DRAIN CURRENT (A)
V
J
V
GS
= 25°C
GS
Gate Voltage
15
vs. Voltage
= 4.5 V
80
= 10 V
2.5
T
T
T
J
J
T
J
100
= 150°C
= 125°C
J
= 85°C
= −55°C
20
3.0
120
25
3.5
140
160
4.0
30