SST25VF040B-80-4I-SAE-T Microchip Technology, SST25VF040B-80-4I-SAE-T Datasheet - Page 27

• Manufacturer Part Number: SST25VF040B-80-4I-SAE-T
• Description: 2.7V To 3.6V 4Mbit SPI Serial Flash 8 SOIC 3.90mm (.150") T/R
• Manufacturer: Microchip Technology

Specifications of SST25VF040B-80-4I-SAE-T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Speed: 80MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4 Mbit SPI Serial Flash
SST25VF040B
Power-Up Specifications
All functionalities and DC specifications are specified for a V
in less than 300 ms). See Table 15 and Figure 25 for more information.
TABLE 15: Recommended System Power-up Timings
©2009 Silicon Storage Technology, Inc.
Symbol
T
T
PU-READ
PU-WRITE
FIGURE 25: Power-up Timing Diagram
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
V
V
DD
DD
Parameter
V
V
V
Max
Min
DD
DD
DD
Min to Read Operation
Min to Write Operation
Commands may not be accepted or properly
Chip selection is not allowed.
interpreted by the device.
T
T
27
PU-READ
PU-WRITE
DD
ramp rate of greater than 1V per 100 ms (0v - 3.0V
Device fully accessible
Minimum
100
100
1295 PwrUp.0
Time
S71295-05-000
Units
Data Sheet
µs
µs
T15.0 1295
10/09