SST25VF064C-80-4C-Q2AE Microchip Technology, SST25VF064C-80-4C-Q2AE Datasheet - Page 16

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SST25VF064C-80-4C-Q2AE

Manufacturer Part Number
SST25VF064C-80-4C-Q2AE
Description
2.7V To 3.6V 64Mbit SPI Serial Flash 8 TDFN 6x8x0.8mm TRAY
Manufacturer
Microchip Technology
Datasheet

Specifications of SST25VF064C-80-4C-Q2AE

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
64M (8M x 8)
Speed
80MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-WDFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SST25VF064C-80-4C-Q2AE
Manufacturer:
FSC
Quantity:
1 200
Data Sheet
32-KByte and 64-KByte Block-Erase
The 32-KByte Block-Erase instruction clears all bits in the
selected 32 KByte block to FFH. A Block-Erase instruction
applied to a protected memory area will be ignored. The
64-KByte Block-Erase instruction clears all bits in the
selected 64 KByte block to FFH. A Block-Erase instruction
applied to a protected memory area will be ignored. Prior to
any Write operation, the Write-Enable (WREN) instruction
must be executed. CE# must remain active low for the
duration of any command sequence. The 32-Kbyte Block-
Erase instruction is initiated by executing an 8-bit com-
mand, 52H, followed by address bits A
A
©2010 Silicon Storage Technology, Inc.
MS
FIGURE 13: 32-KByte Block-Erase Sequence
FIGURE 14: 64-KByte Block-Erase Sequence
-A
15
(A
MS
= Most Significant Address) are used to
SCK
SCK
CE#
CE#
SO
SO
SI
SI
MODE 3
MODE 0
MODE 3
MODE 0
23
-A
0
. Address bits
MSB
MSB
0 1 2 3 4 5 6 7 8
0 1 2 3 4 5 6 7 8
D8
52
HIGH IMPEDANCE
HIGH IMPEDANCE
16
MSB
MSB
determine block address (BA
be V
is executed. The 64-Kbyte Block-Erase instruction is initi-
ated by executing an 8-bit command D8H, followed by
address bits A
determine block address (BA
be V
is executed. Poll the Busy bit in the software status register
or wait T
KByte Block-Erase or 64-KByte Block-Erase cycles. See
Figure 13 for the 32-KByte Block-Erase sequence and Fig-
ure 14 for the 64-KByte Block-Erase sequence.
ADDR
ADDR
IL
IL
15 16
15 16
or V
or V
BE
ADDR
ADDR
64 Mbit SPI Serial Dual I/O Flash
IH.
IH.
for the completion of the internal self-timed 32-
CE# must be driven high before the instruction
CE# must be driven high before the instruction
23 24
23 24
23
-A
ADDR
ADDR
0
. Address bits A
1327 F33.0
1392 F32.0
31
31
X
X
), remaining address bits can
), remaining address bits can
SST25VF064C
MS
S71392-04-000
-A
15
are used to
04/10

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