GP1S51VJ000F Sharp Electronics, GP1S51VJ000F Datasheet - Page 3

• Manufacturer Part Number: GP1S51VJ000F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S51VJ000F

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 3mm
• Slit Width: 0.5mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 75mW
• Fall Time: 20000ns
• Rise Time: 15000ns
• Pin Count: 4
• Mounting: Screw
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Fig. 1 Forward Current vs. Ambient
Fig. 3 Peak Forward Current vs.
Fig. 5 Collector Current vs.
2000
1000
500
200
100
60
50
40
30
20
10
12
50
20
10
0
- 25
8
6
4
2
Temperature
Duty Ratio
Forward Current
0
5
0
10
- 2
10
0
Ambient temperature T
Forward current I
2
20
25
Duty ratio
5
Pulse width <=100 s
T
10
a
= 25˚C
50
30
- 1
F
( mA )
a
2
( ˚C )
V
T
CE
a
= 25˚C
75
40
= 5V
85
5
100
50
1
Fig. 2 Collector Power Dissipation vs.
Fig. 4 Forward Current vs.
Fig. 6 Collector Current vs.
120
100
500
200
100
80
75
60
40
20
50
20
10
- 25
7
6
5
4
3
2
1
0
0
Forward Voltage
5
2
1
Collector-emitter Voltage
Ambient Temperature
GP1S50/GP1S51V/GP1S52V/GP1S54
0
0
1
T
0.5
a
Collector-emitter voltage V
= 75˚C
2
0
Ambient temperature T
50˚C
Forward voltage V
1
3
25
4
1.5
I
F
= 50mA
5
40mA
30mA
20mA
10mA
2
50
6
F
a
- 25˚C
( V )
2.5
( ˚C )
7
25˚C
CE
0˚C
T
( V )
75
a
8
= 25˚C
3
85
9
3.5
100
10