GP1S51VJ000F Sharp Electronics, GP1S51VJ000F Datasheet - Page 4

• Manufacturer Part Number: GP1S51VJ000F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S51VJ000F

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 3mm
• Slit Width: 0.5mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 75mW
• Fall Time: 20000ns
• Rise Time: 15000ns
• Pin Count: 4
• Mounting: Screw
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Fig. 7 Collector Current vs.
Fig. 9 Response Time vs.
Fig.10 Frequency Response
- 10
- 15
- 20
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.5
0.2
0.1
- 5
50
20
10
0.01
0
- 25
5
2
1
0
Load Resistance
Ambient Temperature
2
0.02 0.05 0.1 0.2
V
I
T
C
5
CE
a
= 2mA
= 25˚C
= 2V
10
0
3
Ambient temperature T
2
Load resistance R
t
t
d
s
Frequency f ( Hz )
25
t
5
f
t
r
10
4
2
0.5
50
R
10k
L
L
=
5
( k
1
a
I
V
10
( ˚C )
F
1k
CE
= 20mA
5
)
V
I
T
2
75
C
= 5V
CE
a
= 2mA
2
= 25˚C
= 2V
100
5
5
100
10
10
6
Input
R
D
Fig. 8 Collector-emitter Saturation Voltage vs.
Test Circuit for Response Time
Fig.11 Collector Dark Current vs.
10
10
10
10
10
0.25
0.15
0.05
0.2
0.1
- 6
- 7
- 8
- 9
- 10
- 25
0
5
2
5
2
5
2
5
2
- 25
Ambient Temperature
GP1S50/GP1S51V/GP1S52V/GP1S54
Ambient Temperature
V
CC
R
L
V
CE
Output
= 20V
0
0
Ambient temperature T
Ambient temperature T
Output
25
25
Input
t
d
t
r
50
50
a
a
I
I
( ˚C )
F
C
t
( ˚C )
s
= 40mA
= 0.5mA
75
75
t
f
100
100
10%
90%