FB20R06KL4_B1 Infineon Technologies, FB20R06KL4_B1 Datasheet - Page 3

• Manufacturer Part Number: FB20R06KL4_B1
• Description: IGBT Modules N-CH 600V 25A
• Manufacturer: Infineon Technologies

Specifications of FB20R06KL4_B1

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 25A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 25 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EASY2
• Ic (max): 20.0 A
• Vce(sat) (typ): 1.95 V
• Technology: IGBT2 Low Loss
• Housing: EasyPIM™ 2
• Lead Free Status / RoHS Status: Compliant

Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Diode Wechselrichter/ diode inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
Transistor Brems-Chopper/ transistor brake-chopper
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Diode Brems-Chopper/ diode brake-chopper
Durchlaßspannung
forward voltage
NTC-Widerstand/ NTC-thermistor
Nennwiderstand
rated resistance
Abweichung von R
deviation of R
Verlustleistung
power dissipation
B-Wert
B-value
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Technische Information / technical information
100
100
T
V
V
I
V
V
I
V
V
I
V
V
V
V
V
f = 1MHz, T
V
V
T
T
T
T
T
R
FB20R06KL4B1
F
F
F
C
vj
vj
C
C
C
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
CE
CE
CE
=I
=I
=I
2
V
= 25°C
= 25°C,
= 125°C,
= 25°C
= 100°C, R
= 25°C
= R
Nenn
Nenn
Nenn
GE
= V
= 25 V, V
= 0V, V
= 0V, T
= 0V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= 15V, T
= 15V, T
1
= 0V, T
,
,
,
GE
exp [B(1/T
,
vj
GE
vj
vj
= 25°C
T
GE
vj
vj
vj
vj
vj
vj
vj
vj
100
= 25°C,
= 125°C,
= 20V, T
vj
vj
= 25°C, V
= 125°C, V
= 25°C, V
= 125°C, V
= 25°C, V
= 125°C, V
= 25°C,
= 125°C,
= 0 V
= 25°C,
= 25°C, V
= 493
2
- 1/T
- di
- di
- di
vj
1
= 25°C
)]
F
F
F
I
I
3(12)
/dt =
/dt =
/dt =
I
I
F
F
I
I
I
R
R
R
R
R
R
C
C
C
CE
F
F
=
=
=
=
=
=
=
=
=
=
=
=
=
=
20 A
20 A
1000 A/us
300 V
300 V
1000 A/us
300 V
300 V
1000 A/us
300 V
300 V
20,0 A
20,0 A
0,5mA
600V
20A
20A
R
V
V
B
L
CC'+EE'
E
GE(TO)
I
C
R
P
I
CE sat
GES
V
Q
V
R/R
25/50
RM
rec
ies
25
25
CE
F
F
r
Vorläufig
preliminary
min.
min.
min.
min.
min.
4,5
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
typ.
typ.
typ.
typ.
3375
0,35
1,95
2,45
2,55
1,7
1,7
1,7
0,2
2,2
5,5
1,1
10
20
23
1
5
-
-
-
max.
max.
max.
max.
max.
2,15
2,55
400
6,5
5,0
2,9
40
20
5
-
-
-
-
-
-
-
-
-
-
-
-
mW
m
µAs
µAs
mA
mJ
mJ
nH
nF
nA
k
%
V
V
A
A
V
V
V
V
V
K