M48Z09-100PC1 STMicroelectronics, M48Z09-100PC1 Datasheet

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M48Z09-100PC1

Manufacturer Part Number
M48Z09-100PC1
Description
Manufacturer
STMicroelectronics
Type
NVSRAMr
Datasheet

Specifications of M48Z09-100PC1

Word Size
8b
Organization
8Kx8
Density
64Kb
Interface Type
Parallel
Access Time (max)
100ns
Operating Supply Voltage (typ)
5V
Package Type
PCDIP
Operating Temperature Classification
Commercial
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temp Range
0C to 70C
Pin Count
28
Mounting
Through Hole
Supply Current
80mA
Lead Free Status / RoHS Status
Supplier Unconfirmed

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M48Z09-100PC1
Manufacturer:
ST
Quantity:
560
Part Number:
M48Z09-100PC1
Manufacturer:
ST
0
DESCRIPTION
The M48Z09,19 ZEROPOWER
non-volatile static RAM which is pin and function
compatible with the MK48Z09,19.
A special 28 pin 600mil DIP CAPHAT
houses the M48Z09,19 silicon with a long life lith-
ium button cell to form a highly integrated battery
backed-up memory solution.
Table 1. Signal Names
November 1994
A0-A12
DQ0-DQ7
INT
E1
E2
G
W
V
V
INTEGRATED ULTRA LOW POWER SRAM,
POWER-FAIL CONTROL CIRCUIT and
BATTERY
UNLIMITED WRITE CYCLES
READ CYCLE TIME EQUALS WRITE CYCLE
TIME
AUTOMATIC POWER-FAIL CHIP DESELECT and
WRITE PROTECTION
POWER-FAIL INTERRUPT
CHOICE of TWO WRITE PROTECT
VOLTAGES:
– M48Z09: 4.5V
– M48Z19: 4.2V
SELF CONTAINED BATTERY in the CAPHAT
DIP PACKAGE
11 YEARS of DATA RETENTION in the
ABSENCE of POWER
PIN and FUNCTION COMPATIBLE with the
MK48Z09, 19 and JEDEC STANDARD 8K x 8
SRAMs
CC
SS
Address Inputs
Data Inputs / Outputs
Power Fail Interrupt
Chip Enable 1
Chip Enable 2
Output Enable
Write Enable
Supply Voltage
Ground
V
V
PFD
PFD
4.75V
4.5V
®
RAM is an 8K x 8
package
CMOS 8K x 8 ZEROPOWER SRAM
Figure 1. Logic Diagram
A0-A12
E1
E2
W
G
13
28
Battery CAPHAT
PCDIP28 (PC)
V CC
V SS
1
M48Z09
M48Z19
M48Z09
M48Z19
8
DQ0-DQ7
INT
AI01184
1/13

Related parts for M48Z09-100PC1

M48Z09-100PC1 Summary of contents

Page 1

... The M48Z09,19 ZEROPOWER non-volatile static RAM which is pin and function compatible with the MK48Z09,19. A special 28 pin 600mil DIP CAPHAT houses the M48Z09,19 silicon with a long life lith- ium button cell to form a highly integrated battery backed-up memory solution. Table 1. Signal Names A0-A12 ...

Page 2

... PROMs without any requirement for special write G timing or limitations on the number of writes that A10 can be performed. E1 The M48Z09,19 also has its own Power-fail Detect DQ7 circuit. The control circuitry constantly monitors the single 5V supply for an out of tolerance condition. DQ6 When V CC ...

Page 3

... CELL VOLTAGE SENSE V CC READ MODE The M48Z09, the Read Mode whenever W (Write Enable) is high, E1 (Chip Enable 1) is low, and E2 (Chip Enable 2) is high. The device archi- tecture allows ripple- through access of data from eight of 65,536 locations in the static storage array. ...

Page 4

... V OL Output Low Voltage (INT) V Output High Voltage OH Note: 1. The INT pin is Open Drain. Table 6. Power Down/Up Trip Points DC Characteristics Symbol Parameter V Power-fail Deselect Voltage (M48Z09) PFD V Power-fail Deselect Voltage (M48Z19) PFD V Battery Back-up Switchover Voltage SO t Expected Data Retention Time DR Note: 1 ...

Page 5

... F may cause corruption of RAM data. FB exceeds V (min) and is guaranteed to go high t CC PFD tDR tFB tPFX DON'T CARE HIGH-Z rises above V (min) but before normal system operations begins. Even CC PFD M48Z09, M48Z19 Min Max Unit 0 s 300 ...

Page 6

... Address Transition to Output Transition AXQX Notes 100pF (see Figure 4 30pF (see Figure 4) L Figure 6. Read Mode AC Waveforms A0-A12 DQ0-DQ7 6/ 4.75V to 5.5V or 4.5V to 5.5V Parameter tAVAV VALID tAVQV tE1LQV tE1LQX tE2HQV tE2HQX tGLQV tGLQX VALID M48Z09 / 19 Unit -100 Min Max 100 ns 100 ns 100 ns 100 tAXQX ...

Page 7

... Address Valid to Chip Enable 2 Low AVE2L ( Write Enable High to Output Transition WHQX Notes 30pF (see Figure 4 goes low or E2 high simultaneously with W going low, the outputs remain in the high impedance state 4.75V to 5.5V or 4.5V to 5.5V Parameter M48Z09, M48Z19 M48Z09 / 19 Unit -100 Min Max 100 ...

Page 8

... M48Z09, M48Z19 Figure 7. Write Enable Controlled, Write AC Waveforms A0-A12 DQ0-DQ7 Figure 8. Chip Enable Controlled, Write AC Waveforms A0-A12 tAVE1L E1 tAVE2H E2 W DQ0-DQ7 8/13 tAVAV VALID tAVWH tAVE1L tAVE2H tWLWH tAVWL tWLQZ DATA INPUT tDVWH tAVAV VALID tAVE1H tE1LE1H tAVE2L tE2HE2L tAVWL DATA INPUT ...

Page 9

... SYSTEM BATTERY LIFE The useful life of the battery in the M48Z09,19 is expected to ultimately come to an end for one of two reasons: either because it has been discharged while providing current to the RAM in the battery ...

Page 10

... Since either storage life or capacity consumption can end the battery’s life, the system life is marked by which ever occurs first. Reference for System Life Each M48Z09,19 is marked with a nine digit manu- facturing date code in the form of H99XXYYZZ. For example, H995B9431 is: values ...

Page 11

... For a list of available options (Supply Voltage, Speed, Package, etc...) refer to the current Memory Shortform catalogue. For further information on any aspect of this device, please contact the SGS-THOMSON Sales Office nearest to you. M48Z09 -100 PC 1 Speed Package -100 100ns PC M48Z09, M48Z19 Temp. Range PCDIP28 11/13 ...

Page 12

... M48Z09, M48Z19 PCDIP28 - 28 pin Plastic DIP, battery CAPHAT Symb Typ PCDIP28 Drawing is not to scale 12/13 mm Min Max 8.89 9.65 0.38 0.76 8.38 8.89 0.38 0.53 1.14 1.78 0.20 0.31 39.37 39.88 17.83 18.34 2.29 2.79 29.72 36.32 15.24 16.00 3.05 3.81 ...

Page 13

... ZEROPOWER is a registered trademark of SGS-THOMSON Microelectronics CAPHAT and BYTEWIDE are trademarks of SGS-THOMSON Microelectronics SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. M48Z09, M48Z19 13/13 ...

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