X9116WS8Z-2.7 Intersil, X9116WS8Z-2.7 Datasheet - Page 5

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X9116WS8Z-2.7

Manufacturer Part Number
X9116WS8Z-2.7
Description
IC XDCP 16-TAP 10K CMOS 8-SOIC
Manufacturer
Intersil
Series
XDCP™r
Datasheet

Specifications of X9116WS8Z-2.7

Taps
16
Resistance (ohms)
10K
Number Of Circuits
1
Temperature Coefficient
300 ppm/°C Typical
Memory Type
Non-Volatile
Interface
Up/Down (3-Wire)
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Resistance In Ohms
10K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
X9116WS8Z-2.7T1
Manufacturer:
INTERSIL
Quantity:
20 000
DC Electrical Specifications
operating temperature range, -40°C to +85°C or 0°C to +70°C.
NOTES:
Endurance and Data Retention
A.C. Conditions of Test
Test Circuit #1
Input pulse levels
Input rise and fall times
Input reference levels
7. Typical values are for T
SYMBOL
V
S
I
I
V
C
CC1
CC2
I
V
I
SB
LI
IH
IL
IN
V
V CC active current (Store) (EEPROM Store)
Standby supply current
CS, INC, U/D input leakage current
CS, INC, U/D input HIGH voltage
CS, INC, U/D input LOW voltage
CS, INC, U/D input capacitance
CC
Minimum endurance
active current (Increment)
Data retention
PARAMETER
V
V
H
L
/R
/R
A
L
H
= +25°C and nominal supply voltage.
V
PARAMETER
W
5
Test Point
/R
0V to 3V
10ns
1.5V
W
Over recommended operating conditions unless otherwise specified. Boldface limits apply over the
Test Circuit #2
V
V
V
H
CS = V
INC = 0.4V/2.4V @ max t
CS = V
INC = V
CS = V
V
V
V
f = 1MHz
L
L
/R
/R
CC
IN
CC
V
H
L
W
= V
X9116
– 0.3V
= 5V, V
VW
/R
100,000
CC
IL
IH
W
SS
IH
MIN
100
, U/D = V
, U/D = V
TEST CONDITIONS
Test Point
Force
Current
@ max t
– 0.3V, U/D and INC = V
to V
IN
CC
= V
IL
IL
SS
WR
or V
or V
, T
A
IH
IH
CYC
= +25°C,
and
and
Circuit #3 SPICE Macro Model
SS
R
H
or
(Note 10)
Data changes per bit
10pF
MIN
-0.5
2V
C
Years
H
UNIT
R
(Note 7)
TOTAL
R
TYP
10
W
25pF
C
W
V
(Note 10) UNIT
CC
MAX
150
400
±10
0.8
10pF
5
February 3, 2011
+ 0.5
C
L
R
FN8160.3
L
µA
µA
µA
µA
pF
V
V

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