CAT5261YI-00-T2 ON Semiconductor, CAT5261YI-00-T2 Datasheet - Page 7

• Manufacturer Part Number: CAT5261YI-00-T2
• Description: IC POT DIG 100K 256T SPI 24TSSOP
• Manufacturer: ON Semiconductor

Specifications of CAT5261YI-00-T2

• Taps: 256
• Resistance (ohms): 100K
• Number Of Circuits: 2
• Temperature Coefficient: 300 ppm/°C Typical
• Memory Type: Non-Volatile
• Interface: SPI Serial
• Voltage - Supply: 2.5 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 24-TSSOP
• Resistance In Ohms: 100K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

9. This parameter is tested initially and after a design or process change that affects the parameter.
10. t
11. This parameter is tested initially and after a design or process change that affects the parameter.
NOTE:
SCK
Table 8. POWER UP TIMING
Table 9. WIPER TIMING
Table 10. WRITE CYCLE LIMITS
Table 11. RELIABILITY CHARACTERISTICS
SO
CS
SI
N
Symbol
Symbol
Symbol
V
T
I
PUR
t
LTH
t
WRPO
END
t
ZAP
t
DR
V
PUW
t
PUR
WRL
V
WR
V
V
V
V
V
V
Symbol
OH
OL
and t
IH
IH
IH
IL
IL
IL
(Note 11)
(Note 11)
(Note 11)
(Note 11)
Dashed Line = mode (1, 1)
t
PUW
CSS
HI−Z
are delays required from the time V
Wiper Response Time After Power Supply Stable
Wiper Response Time After Instruction Issued
Write Cycle Time
Power−up to Read Operation
Power−up to Write Operation
Endurance
Data Retention
ESD Susceptibility
Latch−Up
t
SU
Parameter
(Notes 9, 10)
VALID IN
Figure 2. Synchronous Data Timing
t
WH
CC
Parameter
MIL−STD−883, Test Method 1033
MIL−STD−883, Test Method 1008
MIL−STD−883, Test Method 3015
JEDEC Standard 17
t
H
is stable until the specified operation can be initiated.
Parameter
http://onsemi.com
Parameter
Reference Test Method
7
t
WL
t
V
t
t
RI
FI
t
HO
1,000,000
2000
Min
100
100
t
CS
Min
5
5
t
CSH
Max
Max
Max
Max
t
10
10
DIS
1
1
5
HI−Z
Cycles/Byte
Units
Years
mA
V
Units
Units
Units
ms
ms
ms
ms
ms