MCP4821-E/SN Microchip Technology, MCP4821-E/SN Datasheet - Page 4

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MCP4821-E/SN

Manufacturer Part Number
MCP4821-E/SN
Description
IC DAC 12BIT W/SPI 8SOIC
Manufacturer
Microchip Technology
Datasheets

Specifications of MCP4821-E/SN

Number Of Converters
1
Package / Case
8-SOIC (3.9mm Width)
Settling Time
4.5µs
Number Of Bits
12
Data Interface
Serial, SPI™
Voltage Supply Source
Single Supply
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Resolution
12 bit
Interface Type
Serial (3-Wire, SPI, Microwire)
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.7 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP4821-E/SN
Manufacturer:
SAMSUNG
Quantity:
3 440
Part Number:
MCP4821-E/SN
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
MCP4821/MCP4822
3V AC/DC CHARACTERISTICS (CONTINUED)
5V EXTENDED TEMPERATURE SPECIFICATIONS
DS21953A-page 4
Electrical Specifications: Unless otherwise indicated, V
R
Internal Voltage Reference (V
Nominal Reference Voltage
Temperature Coefficient
(Note 1)
Output Noise (V
Output Noise Density
1/f Corner Frequency
Output Amplifier
Output Swing
Phase Margin
Slew Rate
Short Circuit Current
Settling Time
Dynamic Performance
DAC-to-DAC Crosstalk
Major Code Transition Glitch
Digital Feedthrough
Analog Crosstalk
Note 1:
Electrical Specifications: Unless otherwise indicated, V
R
Power Requirements
Input Voltage
Input Current - MCP4821
Input Current
Hardware Shutdown Current
Software Shutdown Current
Power-On Reset threshold
DC Accuracy
Resolution
INL Error
Note 1:
L
L
= 5 k
= 5 k
2:
2:
Parameters
Parameters
to GND, C
to GND, C
By design, not production tested.
Too small to quantify.
By design, not production tested.
Too small to quantify.
- MCP4822
REF
Noise)
L
L
= 100 pF, T
= 100 pF. Typical values at +125°C by characterization or simulation.
REF
(0.1-10 Hz)
A
t
I
(10 kHz)
f
)
SETTLING
SHDN_SW
= -40 to +85°C. Typical values at 25°C
(1 kHz)
CORNER
E
V
e
e
V
V
I
Sym
V
Sym
NREF
NREF
SHDN
NREF
PM
V
REF
SR
I
INL
OUT
I
REF
SC
POR
DD
DD
n
/°C
2.008
Min
Min
2.7
12
V
DD
DD
DD
0.010 to
2.048
= 3V, AV
= 5V, AV
0.25
0.09
0.55
Typ
125
290
400
<10
<10
<10
1.2
1.0
– 0.040
4.5
1.85
45
66
14
45
Typ
350
440
1.5
±4
5
SS
SS
= 0V, V
= 0V, V
Max
2.088
5.5
Max
0.65
0.32
325
160
24
REF
REF
= 2.048V external, output buffer gain (G) = 1x,
= 2.048V, output buffer gain (G) = 2x,
Units
LSb
Bits
µV/ Hz
µV/ Hz
ppm/°C
ppm/°C
µA
µA
µA
LSb/°C
LSb/°C
V
Units
µV
V/µs
nV-s
nV-s
nV-s
nV-s
mA
Hz
µs
V
°
p-p
Digital inputs grounded, Output
unloaded, code = 0x000
© 2005 Microchip Technology Inc.
V
Code = 0xFFFh
-40°C to 0°C
-40°C to 0°C
0°C to +85°C
0°C to +85°C
Code = 0xFFFh, G = 1
Code = 0xFFFh, G = 1
Code = 0xFFFh, G = 1
Accuracy is better than 1 LSb for
V
Within 1/2 LSb of final value from
1/4 to 3/4 full-scale range
Note 2
1 LSb change around major carry
(
1000...0000
Note 2
Note 2
0111...1111 to
OUTA
OUT
= 10 mV to (V
when G = 1x and
Conditions
Conditions
)
DD
– 40 mV)

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