LP3929TME-AACQ National Semiconductor, LP3929TME-AACQ Datasheet - Page 6

• Manufacturer Part Number: LP3929TME-AACQ
• Manufacturer: National Semiconductor

Specifications of LP3929TME-AACQ

• Operating Temperature (max): 85C
• Pin Count: 24
• Mounting: Surface Mount
• Lead Free Status / Rohs Status: Not Compliant

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LVCMOS A (Host) Port (V
V
V
I
I
V
V
LVCMOS B (Card) Port (V
V
V
I
I
IOS +
IOS −
V
V
IH
IL
IH
IL
Supply Voltage (V
Supply Voltage (V
LVCMOS A Port Input Voltage
LVCMOS A Port I/O Voltage
LVCMOS A Port I/O Voltage
Junction Temperature
Storage Temperature
Lead Temperature (Note 13)
Pad Temperature (Note 13)
Derate micro SMD
Package above 25°C
Symbol
IH
IL
OH
OL
IH
IL
OH
OL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Typical values and limits appearing in standard typeface apply for T
entire ambient temperature range for operation, −30°C to +85°C. (Notes 3, 4)
Input Voltage High Level
Input Voltage Low Level
Input Current High Level
Input Current Low Level
Output Voltage High Level
Output Voltage Low Level
Input Voltage High Level
Input Voltage Low Level
Input Current High Level
Input Current Low Level
Short Circuit Current
Output Voltage High Level
Output Voltage Low Level
BAT
DDA
Parameter
)
)
DDA
DDB
= 1.71V to 1.92V)
= 2.85V)
−0.3V to V
−0.3V to V
−0.3V to V
V
V
I
I
V
V
V
V
I
I
OH
OL
OH
OL
IH
IL
IH
IL
OUTlow
OUThigh
= 4 mA
= 2 mA
= V
= V
= V
= −4 mA
= V
= − 2 mA
−65°C to +150°C
Unless otherwise specified: C
−0.3V to +6.0V
−0.3V to +3.3V
SS
SS
(Note 1)
DDA
DDB
= V
= V
22.9 mW/°C
DDA
DDA
DDB
DDB
SS
+ 0.3V
+ 0.3V
+ 0.3V
150°C
235°C
235°C
Conditions
6
Maximum Power Dissipation Capacity at 25°C
ESD Rating
V
V
Ambient Temperature
A
Operating Conditions
BAT
DDA
V
V
V
V
EN = V
EN = V
D0_B to D2_B
D3_B
CMD_B
D0_B to D2_B
D3_B
CMD_B
micro SMD
HBM - MIL-STD-883E 3015.7 std.
MM - JESD22-A115-A std.
CDM - 500V (JESD22-C 101) Std.
IEC61000-4-2 std., 330Ω, 150pF,
Air Gap, B Side (Note 2)
IEC61000-4-2 std., 330Ω, 150pF,
Direct Contact, B Side (Note 2)
= 25°C. Limits appearing in boldface type apply over the
DDA
DDA
DDA
DDA
to V
to V
= 1.71V
= 1.92V
= 1.71V
= 1.92V
VBAT
SS
SS
DDA
SS
= 1 µF, I
0.65×V
0.65×V
0.75×V
1.1115
− 300
1.248
1.26
− 80
OUT
Min
V
− 2
− 5
− 1
−1
−1
−1
−1
0
0
0
0
0
SS
DDA
DDB
DDB
= 1 mA, C
− 200
− 20
Typ
−40
1.8
0.2
6.5
0.3
0.1
45
0
0
0
0
0
VDDB
= 1 µF, C
0.30×V
0.35×V
0.25×V
0.513
0.576
V
V
Max
1.92
1.92
1.92
0.45
+ 13
− 20
+10
+ 2
+ 5
+ 1
+1
+1
+1
DDA
DDB
0
−30°C to +85°C
1.71V to 1.92V
DDA
DDB
DDB
3.05V to 5.5V
VDDA
= 1 µF.
± 200V
± 500V
± 15kV
Units
2.8 W
± 2kV
± 8kV
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V