NJVMJD32CT4G ON Semiconductor, NJVMJD32CT4G Datasheet - Page 7

• Manufacturer Part Number: NJVMJD32CT4G
• Manufacturer: ON Semiconductor

1000
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
0.001
1
1
0
0.001
0.01
V
I
C
CE
150C
150C
Figure 15. DC Current Gain at V
/I
Figure 17. Collector−Emitter Saturation
Figure 19. Base−Emitter “On” Voltage
B
= 5 V
= 10
0.01
I
I
I
0.01
C
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
25C
0.1
−55C
−55C
25C
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)
Voltage
0.1
0.1
−55C
150C
1
1
CE
1
V
= 4 V
CE
25C
http://onsemi.com
= 4 V
10
10
10
7
1000
100
1.6
1.2
0.8
0.4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
1
2
0
0.001
0.01
0.01
10 mA
I
C
Figure 18. Base−Emitter Saturation Voltage
/I
B
Figure 20. Collector Saturation Region
Figure 16. DC Current Gain at V
150C
= 10
−55C
150C
25C
0.1
100 mA
I
0.01
C
I
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
I
B
, BASE CURRENT (mA)
0.1
500 mA
−55C
1
25C
0.1
1 A
10
1
I
C
= 3 A
1
V
100
CE
CE
= 2 V
= 2 V
25C
T
A
=
1000
10
10