NTE457 NTE Electronics, Inc., NTE457 Datasheet
NTE457
Manufacturer Part Number
NTE457
Description
Transistor, JFET; Silicon N Channel; 310 mW; 125 degC
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE457.pdf
(2 pages)
Specifications of NTE457
Capacitance, Input
4.5 pF
Capacitance, Reverse Recovery
1 pF
Channel Type
N-Channel
Current, Drain
15 mA
Current, Gate
50 mA
Current, Gate Reverse
–1 nA
Package Type
TO-226AA (TO-92)
Polarization
N-Channel
Power Dissipation
310 mW
Temperature, Operating, Maximum
+125 °C
Transconductance, Forward
4000 umhos
Transistor Type
N-Channel
Voltage, Breakdown, Gate To Source
–30 V
Voltage, Drain To Gate
30 V
Voltage, Gate To Source, Breakdown
–30 V
Voltage, Gate To Source, Cut-off
–6 V
Voltage, Gate To Source, Forward
–30 V
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage, V
Reverse Gate–Source Voltage, V
Gate Current, I
Total Device Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
ON Characteristics
Zero–Gate Voltage Drain Current
Small–Signal Characteristics
Forward Transfer Admittance
Output Admittance Common Source
Input Capacitance
Reverse Transfer Capacitance
Common Source
Derate Above 25 C
Parameter
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DG
Silicon N–Channel JFET Transistor
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose Amp, Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
stg
A
= +25 C unless otherwise specified)
GSR
Symbol
J
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
630ms, Duty Cycle
(BR)GS
I
I
GS(off)
V
|y
C
C
|y
GSS
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
S
GS
os
rss
iss
fs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
|
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
V
V
V
Note 1
V
Note 1
V
V
NTE457
G
GS
GS
DS
DS
DS
DS
DS
DS
DS
= –10 A, V
= 15V, I
= 15V, I
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
Test Conditions
D
D
GS
GS
GS
GS
GS
DS
DS
DS
= 10nA
= 100 A
= 0
= 0, T
= 0, Note 1
= 0, f = 1kHz,
= 0, f = 1kHz,
= 0, f = 1kHz
= 0, f = 1kHz
10%.
= 0
A
= +100 C
1000
–0.5
Min
–25
–
–
–
1
–
–
–
Typ
4.5
1.5
10
–
–
–
–
–
3
–
–65 to +150 C
–200
5000
Max
–6.0
–2.5
7.0
3.0
–1
50
2.82mW/ C
–
5
310mW
+125 C
10mA
Unit
mhos
mhos
mA
mA
mA
–25V
pF
pF
V
V
V
25V
25V
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NTE457 Summary of contents
Page 1
... Reverse Transfer Capacitance Note 1. Pulse Test: Pulse Width NTE457 General Purpose Amp, Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Max .500 (12.7) Min .100 (2.54) .105 (2.67) Max .205 (5.2) Max .135 (3.45) Min Seating Plane .021 (.445) Dia Max .050 (1.27) .165 (4.2) Max .105 (2.67) Max ...