NTE457 NTE Electronics, Inc., NTE457 Datasheet - Page 2

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NTE457

Manufacturer Part Number
NTE457
Description
Transistor, JFET; Silicon N Channel; 310 mW; 125 degC
Manufacturer
NTE Electronics, Inc.
Datasheet

Specifications of NTE457

Capacitance, Input
4.5 pF
Capacitance, Reverse Recovery
1 pF
Channel Type
N-Channel
Current, Drain
15 mA
Current, Gate
50 mA
Current, Gate Reverse
–1 nA
Package Type
TO-226AA (TO-92)
Polarization
N-Channel
Power Dissipation
310 mW
Temperature, Operating, Maximum
+125 °C
Transconductance, Forward
4000 umhos
Transistor Type
N-Channel
Voltage, Breakdown, Gate To Source
–30 V
Voltage, Drain To Gate
30 V
Voltage, Gate To Source, Breakdown
–30 V
Voltage, Gate To Source, Cut-off
–6 V
Voltage, Gate To Source, Forward
–30 V
.105 (2.67) Max
.205 (5.2) Max
(5.33)
(12.7)
.100 (2.54)
.210
.500
Max
Min
D S G
.050 (1.27)
.135 (3.45) Min
(4.2)
.165
Max
.105 (2.67) Max
Seating Plane
.021 (.445) Dia Max

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