NTE324 NTE Electronics, Inc., NTE324 Datasheet
NTE324
Manufacturer Part Number
NTE324
Description
Transistor; TO39; NPN; 120 V; 120 V; 4 V; 1 A; 10 W; 200 degC; 175 degC/W; 5 @
Manufacturer
NTE Electronics, Inc.
Type
Driver, Powerr
Datasheet
1.NTE324.pdf
(2 pages)
Specifications of NTE324
Current, Collector
1 A
Current, Collector Cutoff
1 μA (Max.)
Current, Continuous Collector
1 A
Current, Gain
40 to 150
Device Dissipation
10 W
Frequency
30 MHz
Gain, Dc Current, Maximum
5 @ 1 A
Gain, Dc Current, Minimum
40 @ 250 mA
Package Type
TO-39
Polarity
NPN
Power Dissipation
10 W
Primary Type
Si
Resistance, Thermal, Junction To Case
17.4 °C/W
Temperature Range, Junction, Operating
200 °C
Thermal Resistance, Junction To Ambient
175 °C⁄W
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
120 V
Voltage, Collector To Base
120 V
Voltage, Collector To Emitter
120 V
Voltage, Collector To Emitter, Saturation
2 V
Voltage, Emitter To Base
4 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a
TO39 type package designed for use as drivers for high power transistors in general purpose amplifier
and switching circuits.
Absolute Maximum Ratings:
Collector–Base Voltage (I
Collector–Emitter Voltage, V
Emitter–Base Voltage (I
Collector Current, I
Base Current, I
Total Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Note 1. Pulse Duration = 300 s, Duty Cycle
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage V
Collector–Emitter Saturation Voltage
T
T
A
C
= +25 C
= +25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Silicon Complementary Transistors
E
= 0), V
tot
NTE323 (PNP) & NTE324 (NPN)
= 0), V
CEO
stg
C
Symbol
EBO
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
CEO(sus)
CE(sat)
I
I
I
I
CBO
CBO
CEO
CEV
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
V
V
I
I
I
I
C
C
C
C
CE
CB
CE
CE
EB
thJC
= 10mA, I
= 250mA, I
= 500mA, I
= 1A, I
= 120V, V
= 4V, I
= 120V, I
= 80V, I
= 120V, V
thJA
2%.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 200mA, Note 1
B
B
= 0
E
B
B
BE
= 0
= 0, Note 1
BE
= 0
= 25mA, Note 1
= 50mA, Note 1
= –1.5V, T
= –1.5V
C
= +150 C
Min
120
–
–
–
–
–
–
–
–
Typ Max Unit
–
–
–
–
–
–
–
–
–
–65 to +200 C
0.6
1.0
2.0
10
1
1
1
1
–
17.4 C/W
175 C/W
+200 C
500mA
120V
120V
mA
10W
V
V
V
V
A
A
A
A
1W
4V
1A
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NTE324 Summary of contents
Page 1
... NTE323 (PNP) & NTE324 (NPN) Silicon Complementary Transistors Description: The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a TO39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits. Absolute Maximum Ratings: Collector– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Base–Emitter Voltage DC Current Gain Transition Frequency Collector–Base Capacitance Small–Signal Current Gain Note 1. Pulse Duration = 300 s, Duty Cycle Emitter = +25 C unless otherwise specified) C Symbol Test Conditions ...