NTE324 NTE Electronics, Inc., NTE324 Datasheet - Page 2

• Manufacturer Part Number: NTE324
• Description: Transistor; TO39; NPN; 120 V; 120 V; 4 V; 1 A; 10 W; 200 degC; 175 degC/W; 5 @
• Manufacturer: NTE Electronics, Inc.
• Type: Driver, Powerr

Specifications of NTE324

• Current, Collector: 1 A
• Current, Collector Cutoff: 1 μA (Max.)
• Current, Continuous Collector: 1 A
• Current, Gain: 40 to 150
• Device Dissipation: 10 W
• Frequency: 30 MHz
• Gain, Dc Current, Maximum: 5 @ 1 A
• Gain, Dc Current, Minimum: 40 @ 250 mA
• Package Type: TO-39
• Polarity: NPN
• Power Dissipation: 10 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 17.4 °C/W
• Temperature Range, Junction, Operating: 200 °C
• Thermal Resistance, Junction To Ambient: 175 °C⁄W
• Transistor Polarity: NPN
• Voltage, Breakdown, Collector To Emitter: 120 V
• Voltage, Collector To Base: 120 V
• Voltage, Collector To Emitter: 120 V
• Voltage, Collector To Emitter, Saturation: 2 V
• Voltage, Emitter To Base: 4 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics (Cont’d): (T
Note 1. Pulse Duration = 300 s, Duty Cycle
Base–Emitter Voltage
DC Current Gain
Transition Frequency
Collector–Base Capacitance
Small–Signal Current Gain
Parameter
Emitter
(12.7)
(6.6)
.260
.500
Max
Min
Symbol
C
V
h
h
f
cbo
BE
FE
T
fe
45
C
V
V
V
V
V
V
CE
CE
CE
CE
CB
CE
= +25 C unless otherwise specified)
.031 (.793)
= 2V, I
= 2V, I
= 2V, I
= 10V, I
= 20V, I
= 1.5V, I
2%.
Test Conditions
C
C
C
C
E
= 250mA
= 250mA, Note 1
= 1A, Note 1
C
= 0, f = 1MHz
= 100mA, f = 10MHz
= 200mA, f = 1kHz
.018 (0.45)
Base
Collector/Case
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Min
40
30
40
–
5
–
Typ Max Unit
–
–
–
–
–
–
150
1.0
50
–
–
–
MHz
pF
V
–
–
–