ZXMC4559DN8TC Diodes Inc, ZXMC4559DN8TC Datasheet

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ZXMC4559DN8TC

Manufacturer Part Number
ZXMC4559DN8TC
Description
MOSFET & Power Driver ICs 60V TRENCH MOSFET 20V VGS P-Channel
Manufacturer
Diodes Inc
Datasheet
1.ZXMC4559DN8TC.pdf (10 pages)

Specifications of ZXMC4559DN8TC

Lead Free Status / Rohs Status
Lead free / RoHS Compliant
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V
P-Channel V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
APPLICATIONS
•
•
ORDERING INFORMATION
DEVICE MARKING
•
ISSUE 5 - MAY 2005
DEVICE
ZXMC4559DN8TA
ZXMC4559DN8TC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Motor Drive
LCD backlighting
ZXMC
4559
(BR)DSS
(BR)DSS
= -60V; R
= 60V; R
REEL
13’‘
7
’‘
WIDTH
12mm
12mm
TAPE
DS(ON)
DS(ON)
= 0.055 ; I
= 0.105 ; I
QUANTITY
2500 units
PER REEL
500 units
D
D
= 4.7A
1
= -3.9A
Q1 = N-CHANNEL
ZXMC4559DN8
PINOUT
S E M I C O N D U C T O R S
Q2 = P-CHANNEL
Top view
SO8

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ZXMC4559DN8TC Summary of contents

Page 1

... Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMC4559DN8TA 7 12mm ’‘ ZXMC4559DN8TC 13’‘ 12mm DEVICE MARKING • ZXMC 4559 ISSUE 5 - MAY 2005 = 0.055 ; 0.105 ; I = -3. N-CHANNEL QUANTITY PER REEL ...

Page 2

ZXMC4559DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)(c) (a) (d) ...

Page 3

ISSUE 5 - MAY 2005 ZXMC4559DN8 CHARACTERISTICS ...

Page 4

ZXMC4559DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1) (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) ...

Page 5

P-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1) (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) ...

Page 6

ZXMC4559DN8 N-CHANNEL TYPICAL CHARACTERISTICS 10V T = 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25°C 0.1 0. Gate-Source Voltage (V) GS Typical Transfer ...

Page 7

N-CHANNEL TYPICAL CHARACTERISTICS 1600 1400 1200 1000 C ISS 800 C OSS 600 400 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage ISSUE 5 - MAY 2005 ...

Page 8

ZXMC4559DN8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 5 - MAY 2005 8 ...

Page 9

P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 5 - MAY 2005 ZXMC4559DN8 ...

Page 10

ZXMC4559DN8 PACKAGE OUTLINE D Pin 1 Seating Plane e b CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES © Zetex Semiconductors plc 2005 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraße 19 700 Veterans Memorial Hwy D-81673 München Hauppauge, NY 11788 ...

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