ZXMC4559DN8TC Diodes Inc, ZXMC4559DN8TC Datasheet - Page 2

• Manufacturer Part Number: ZXMC4559DN8TC
• Description: MOSFET & Power Driver ICs 60V TRENCH MOSFET 20V VGS P-Channel
• Manufacturer: Diodes Inc

Specifications of ZXMC4559DN8TC

• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature.
(d) For a device with one active die.
(e) For device with 2 active die running at equal power.
ZXMC4559DN8
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at TA=25°C
Linear Derating Factor
Power Dissipation at TA=25°C
Linear Derating Factor
Power Dissipation at TA=25°C
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
Junction to Ambient
S E M I C O N D U C T O R S
(c)
(a) (d)
(b) (e)
(b) (d)
@V
@V
(a) (d)
(a) (e)
(b) (d)
GS
GS
GS
=10V; T
=10V; T
=10V; T
A
A
A
(b)
=25 C
=25 C
=25 C
10 sec.
(b) (d)
(b) (d)
(a) (d)
2
SYMBOL N-Channel
V
V
I
I
I
I
P
P
P
T
SYMBOL
R
R
R
D
DM
S
SM
D
D
D
j
DSS
GS
:T
JA
JA
JA
stg
22.2
22.2
4.7
3.7
3.6
3.4
60
20
-55 to +150
VALUE
1.25
100
1.8
2.1
69
58
10
14
17
P-Channel
-18.3
-18.3
-3.9
-2.8
-2.6
-3.2
-60
20
ISSUE 5 - MAY 2005
mW/°C
mW/°C
mW/°C
UNIT
°C/W
°C/W
°C/W
UNIT
°C
W
W
W
V
V
A
A
A
A
A
A