MKE11R600DCGFC IXYS, MKE11R600DCGFC Datasheet - Page 3

• Manufacturer Part Number: MKE11R600DCGFC
• Description: MOSFET & Power Driver ICs CoolMOS Power Mosfet 600V 15A
• Manufacturer: IXYS

Specifications of MKE11R600DCGFC

• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 15
• Rds(on), Max, Tj=25°c, (?): 0.165
• Ciss, Typ, (pf): 2000
• Qg, Typ, (nc): 40
• Trr, Max, (ns): -
• Trr, Typ, (ns): 390
• Pd, (w): -
• Rthjc, Max, (k/w): 1.10
• Visol, Rms, (v): 2500
• Package Style: I4-PAC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ISOPLUS i4
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
120
100
200
150
80
100
60
40
20
0
50
0
0
Fig. 1 Power dissipation
0
1 2
40
TM
40
Outline
E
3 4
T
T
C
80
[°C]
C
80
[°C]
5
120
120
W
A2
160
160
A
A1
C
80
60
40
20
0
0
Fig. 2 Typ. output characteristics
4x e
T
J
= 25°C
5
V
E1
DS
10
[V]
V
GS
b4
8 V
=
20 V
6 V
5.5 V
5 V
4.5 V
b
15
b2
1 2V
10V
20
The convexbow of substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
DIM.
b4
C
D
D1
D2
E
E1
e
L
L1
Q
R
W
A
A1
A2
b
b2
MKE 11R600DCGFC
40
30
20
10
0
0
Fig. 3 Typ. output characteristics
20.80
14.99
19.56
16.76
19.81
MIN
1.47
2.54
0.51
1.65
2.11
5.33
2.54
MILLIMETER
4.83
2.59
1.17
1.14
―
3.81 BSC
T
J
= 125°C
5
21.34
15.75
20.29
17.53
21.34
MAX
0.74
2.03
2.59
6.20
4.57
0.10
5.21
3.00
2.16
1.40
1.73
2.79
V
DS
10
V
[V]
GS
=
0.190
0.102
0.046
0.045
0.058
0.100
0.020
0.819
0.590
0.065
0.770
0.660
0.780
0.083
0.210
0.100
MIN
10 V
―
0.15 BSC
INCHES
1 2V
15
20 V
6 V
5.5 V
5 V
4.5 V
0.205
0.118
0.085
0.055
0.068
0.110
0.029
0.840
0.620
0.080
0.799
0.690
0.840
0.102
0.244
0.180
0.004
20100920a
MAX
8 V
3 - 6
20