MKE11R600DCGFC IXYS, MKE11R600DCGFC Datasheet - Page 5

• Manufacturer Part Number: MKE11R600DCGFC
• Description: MOSFET & Power Driver ICs CoolMOS Power Mosfet 600V 15A
• Manufacturer: IXYS

Specifications of MKE11R600DCGFC

• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 15
• Rds(on), Max, Tj=25°c, (?): 0.165
• Ciss, Typ, (pf): 2000
• Qg, Typ, (nc): 40
• Trr, Max, (ns): -
• Trr, Typ, (ns): 390
• Pd, (w): -
• Rthjc, Max, (k/w): 1.10
• Visol, Rms, (v): 2500
• Package Style: I4-PAC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[mJ]
[mJ]
E
E
[A]
on
on
I
F
0.25
0.20
0.15
0.10
0.05
0.00
0.4
0.3
0.2
0.1
0.0
25
20
15
10
5
0
0
0
0
Fig. 12 Forward characteristic of boost diode
Fig. 14 Typ. turn-on energy and switching times
Fig. 16 Typ. turn-on energy and switching times
R
V
V
T
I
V
V
T
C
VJ
DS
GS
VJ
CE
GS
G
E on
= 10 Ω
= 12 A
= 10 V
= 380 V
= 0/10 V
= 125°C
= 380 V
= 125°C
10
versus drain current, inductive switching
versus gate resistor, inductive switching
5
E on
1
100°C
125°C
150°C
25°C
10
20
R
V
I
D
G
F
2
[A]
[Ω]
[V]
15
30
3
20
40
t d(on)
t d(on)
t r
t r
25
50
4
25
20
15
10
5
0
40
30
20
10
0
[ns]
[ns]
t
t
[mJ]
[A]
[mJ]
E
I
E
D
off
off
0.10
0.08
0.06
0.04
0.02
0.00
0.10
0.08
0.06
0.04
0.02
0.00
20
18
16
14
12
10
8
6
4
2
0
0
0
0
Fig. 13 Drain current I
Fig. 15 Typ. turn-off energy and switching times
Fig. 17 Typ. turn-off energy and switching times
R
V
V
T
I
V
V
T
20
C
VJ
G
DS
GS
VJ
CE
GS
E off
=
= 380 V
= 0/10 V
= 125°C
= 12 A
= 10 V
= 380 V
= 125°C
10
versus drain current, inductive switching
versus gate resistor, inductive switching
5
40
E off
10 Ω
MKE 11R600DCGFC
60
10
20
R
T
I
D
G
C
80
[°C]
[A]
[Ω]
D
versus case temperature T
15
30
100 120 140 160
20
40
t d(off)
t d(off)
t f
t f
25
50
100
80
60
40
20
0
500
400
300
200
100
0
20100920a
[ns]
[ns]
5 - 6
t
t
C