BFP 420 E6740 Infineon Technologies, BFP 420 E6740 Datasheet

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BFP 420 E6740

Manufacturer Part Number
BFP 420 E6740
Description
RF Bipolar Small Signal NPN Silicon RF Transistor
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 420 E6740

Lead Free Status / Rohs Status
 Details
Other names
BFP420E6740XT
NPN Silicon RF Transistor
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP420
Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
1
2
Pb-containing package may be available upon special request
T S is measured on the collector lead at the soldering point to the pcb
A
A
S
For high gain low noise amplifiers
For oscillators up to 10 GHz
Noise figure F = 1.1 dB at 1.8 GHz
Transition frequency f
Gold metallization for high reliability
SIEGET  25 GHz f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
outstanding G
> 0 °C
0 °C
107 °C
ms
= 21 dB at 1.8 GHz
Marking
AMs
T
2)
T
- Line
= 25 GHz
1=B
1)
2=E
Pin Configuration
3=C
1
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
4=E
-
4
-65 ... 150
-65 ... 150
-
3
Value
160
150
4.5
4.1
1.5
15
15
35
3
Package
SOT343
2007-04-20
BFP420
1
2
Unit
V
mA
mW
°C

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BFP 420 E6740 Summary of contents

Page 1

NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators GHz Noise figure 1.8 GHz outstanding 1.8 GHz ms Transition frequency GHz ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

... Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes ...

Page 5

... Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. Common Emitter S- and Noise-parameter For detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet: http://www.infineon.com/silicondiscretes ...

Page 6

Total power dissipation P tot 200 mW 160 140 120 100 Permissible Pulse Load totmax totDC 0.005 ...

Page 7

Transition frequency GHz V = parameter GHz Power gain ...

Page 8

Noise figure Sopt 2.5 2 1 Noise figure ...

Page 9

Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 4 ...

Page 10

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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